Related papers: Voltage-controlled magnetism enabled by resistive …
Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are…
We report on a method to tune the orientation of in-plane magnetic domains and domain walls in thin ferromagnetic strips by manipulating the magnetic anisotropy. Uniaxial in-plane anisotropy is induced in a controlled way by oblique…
Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nano-electronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence,…
It is shown that magnetic states and field-driven reorientation transitions in synthetic antiferromagnets crucially depend on contributions of higher-order anisotropies. A phenomenological macrospin model is derived to describe the magnetic…
We propose a two terminal nanomagnetic memory element based on magnetization reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse that modifies the perpendicular anisotropy of the system. Our work…
We present a phenomenological theory of altermagnets, that captures their unique magnetization dynamics and allows modelling magnetic textures in this new magnetic phase. Focusing on the prototypical d-wave altermagnets, e.g. RuO$_2$, we…
Using the spin-spiral formulation of the tight-binding linear muffin-tin orbital method, the principal components of the exchange stiffness tensor are calculated for typical hard magnets including tetragonal CoPt-type and hexagonal YCo5…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
Achieving the full understanding and control of the insulator-to-metal transition in Mott materials is key for the next generation of electronics devices, with applications ranging from ultrafast transistors, volatile and non-volatile…
Magnetic anisotropy is one of the important factors in determining magnetic structures. A type of magnetic anisotropy is closely related to the symmetry of crystals. We theoretically investigate magnetic anisotropy and its related magnetic…
A solution to energy-efficient magnetization switching in a nanoparticle with biaxial anisotropy is presented. Optimal control paths minimizing the energy cost of magnetization reversal are calculated numerically as functions of the…
The altermagnetism with antiparallel spin alignment exhibits anisotropic spin splitting and may possess an insulating state with a high Neel temperature, while the charge-order-induced ferroelectricity has ultrafast electric polarization…
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of…
We demonstrate excitation of the gyrotropic mode in a magnetostrictive vortex by time-varying strain. The vortex dynamics is driven by a time-varying voltage applied to the piezoelectric substrate and detected electrically by spin…
Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting…
Epitaxial strain provides a powerful, non-chemical route to tune the properties of functional materials by manipulating the coupling between spin, charge, and lattice degrees of freedom. Using density functional theory (DFT) calculations…
There has been much interest recently in the discovery of thermally induced magnetisation switching, where a ferrimagnetic system can be switched deterministically without and applied magnetic field. Experimental results suggest that the…
The dynamics of antiferromagnets is a current hot topic in condensed matter physics and spintronics. However, the dynamics of insulating antiferromagnets cannot be excited by an electric current, which is a method usually used to manipulate…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field…