Related papers: Voltage-controlled magnetism enabled by resistive …
We investigate ferroaxial magnets, a new class of spin-order-driven multiferroic magnets in which magnetic ordering induces mirror-symmetry breaking while preserving both time-reversal and spatial-inversion symmetries. These systems exhibit…
We show that anisotropic energy of a 2D antiferromagnet is greatly enhanced via stacking on a magnetic substrate layer, arising from the sublattice-dependent interlayer magnetic interaction that defines an effective anisotropic energy.…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…
An attractive feature of magnetic adatoms and molecules for nanoscale applications is their superparamagnetism, the preferred alignment of their spin along an easy axis preventing undesired spin reversal. The underlying magnetic anisotropy…
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…
Simultaneous control of magnetic anisotropy and magnetoresistance, especially with atomic scale precision, remains a pivotal challenge for realizing advanced spintronic functionalities. Here we demonstrate cooperative continuous control…
A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase…
The advent of twist-engineering in two-dimensional (2D) crystals enables the design of van der Waals (vdW) heterostructures exhibiting emergent properties. In the case of magnets, this approach can afford artificial antiferromagnets with…
An isotropic medium, having magnetic sublevels, when subjected to a magnetic field or an electromagnetic field can induce anisotropy in the medium; and as a result the plane of polarization of the probe field can rotate. Therefore the…
Modulation of stress anisotropy of magnetostrictive nanomagnets with strain offers an extremely energy-efficient method of magnetization reversal. The reversal process, however, is often incoherent and hence error-prone in the presence of…
Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk…
The MnBi$_2$Te$_4$ material family has emerged as a key platform for exploring magnetic topological phases, most notably exemplified by the experimental realization of the axion insulator state. While spin dynamics are known to…
The anomalous Nernst effect in nanostructured magnetic materials is a key phenomenon to optimally control and employ the internal energy dissipated in electronic devices, being dependent on for instance the magnetic anisotropy of the active…
It is of common knowledge that the direction of easy axis in the finite-size ferromagnetic sample is controlled by its shape. In the present paper we show that a similar phenomenon should be observed in the compensated antiferromagnets with…
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure,…
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial…
Magnetic skyrmions, topologically nontrivial whirling spin textures at nanometer scales, have emerged as potential information carriers for spintronic devices. The ability to efficiently create and erase magnetic skyrmions is vital yet…