Related papers: Voltage-controlled magnetism enabled by resistive …
Metamagnetism in antiferromagnets exhibits distinct critical behaviors and dynamics when invoking spin reversal and rotation. Here we show a 0.05% anisotropic strain suffices to in-situ modulate the metamagnetic critical field of the Mott…
Exerting control of the magnetic exchange interaction in heterostructures is of both basic interest and has potential for use in spin-based applications relying on quantum effects. We here show that the sign of the exchange interaction in a…
Voltage-induced magnetic anisotropy has been quantitatively studied in polycrystalline Ni thin film deposited on flexible substrate using microstrip ferromagnetic resonance. This anisotropy is induced by a piezoelectric actuator on which…
In metal-insulator transition materials, a small perturbation can shift the delicate balance between competing or coexisting electronic phases, leading to dramatic changes of the material's properties. Using La0.7Sr0.3MnO3, a prototypical…
Exchange bias is a unidirectional magnetic anisotropy that often arise from interfacial interaction of a ferromagnetic and antiferromagnetic layers. In this article, we show that a metallic layer with spin-orbit coupling can induces an…
Flexible ferromagnetic rings are spin-chain magnets, in which the magnetic and mechanical subsystems are coupled. The coupling is achieved through the tangentially oriented anisotropy axis. The possibility to operate the mechanics of the…
The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours…
The ability to control magnetism with strain offers innovative pathways for the modulation of magnetic domain configurations and for the manipulation of magnetic states in materials on the nanoscale. Although the effect of strain on…
We investigate the thermally activated magnetization switching of small ferromagnetic particles driven by an external magnetic field. For low uniaxial anisotropy the spins can be expected to rotate coherently, while for sufficient large…
Frustrated antiferromagnets offer a captivating platform to study the intricate relationship of magnetic interactions, geometric constraints, and emergent phenomena. By controlling spin orientations, these materials can be tailored for…
Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a…
Light-matter interaction at the nanoscale in magnetic materials is a topic of intense research in view of potential applications in next-generation high-density magnetic recording. Laser-assisted switching provides a pathway for overcoming…
Noncollinear frustrated magnets are proposed as a new class of spintronic materials with high magnetoresistance which can be controlled with relatively small applied voltages. It is demonstrated that their magnetic configuration strongly…
In the development of spin-based electronic devices, a particular challenge is the manipulation of the magnetic state with high speed and low power consumption. Although research has focused on the current-induced spin-orbit torque based on…
Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in…
The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the magnetization directions of two ferromagnetic layers determine the giant magnetoresistance magnitude. However, achieving…
A central prospect of antiferromagnetic spintronics is to exploit magnetic properties that are unavailable with ferromagnets. However, this poses the challenge of accessing such properties for readout and control. To this end, light-induced…
Antiferromagnetic materials, which have drawn considerable attention recently, have fascinating features: they are robust against perturbation, produce no stray fields, and exhibit ultrafast dynamics. Discerning how to efficiently…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
Antiferromagnetic spintronics actively introduces new principles of magnetic memory, in which the most fundamental spin-dependent phenomena, i.e. anisotropic magnetoresistance effects, are governed by an antiferromagnet instead of a…