Related papers: Vertical GaN Devices: Process and Reliability
Vertical graphene nanosheets (VGNs) are the material of choice for next-generation electronic device applications. The growing demand for flexible devices in electronic industry brings in restriction on growth temperature of the material of…
While vertical GaN-on-silicon architectures promise a transformative leap in cost-effective power electronics and high-resolution micro-LEDs, their deployment remains bottlenecked by the high electrical resistance of conventional epitaxial…
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…
Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high…
Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…
Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the…
The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench, thickness of gate dielectric and magnesium concentration of…
High-energy-resolution GaN $\alpha$-particle detectors have significant potential for space radiation, nuclear instrumentation, and harsh-environment applications. However, existing GaN $\alpha$-particle detectors still face several key…
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of…
Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications…
This work demonstrates the first nonpolar vertical GaN on GaN pn power diodes grown on m-plane free standing substrates by MOCVD. The SEM and HRXRD results showed the good crystal quality of the homoepitaxial nonpolar structure with low…
We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex…
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…
Perfectly vertical grating couplers leveraging metamaterials can achieve both high coupling efficiency and minimal back reflection. The fabricability of these designs, with segmentations in both the longitudinal and transverse dimensions,…
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the…
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…
We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by utilizing a gate recess with length and depth of 200 nm and…
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are…
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…
In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field…