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Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angstr\"om-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance…

We study the impact of different interlayers and ferroelectric materials on charge trapping during the endurance fatigue of Si FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) gate stack. We have fabricated FeFET devices with different…

Tunneling two level systems affect damping, noise and decoherence in a wide range of devices, including nanoelectromechanical resonators, optomechanical systems, and qubits. Theoretically this interaction is usually described within the…

Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing…

In this thesis, I study a two-dimensional extended Hubbard model in the weak coupling limit. Quite generally, the electron gas is unstable towards a superconducting state even in the absence of phonons. However in the special case of a…

Two-dimensional (2D) materials, composed of single atomic layers, have attracted vast research interest since the breakthrough discovery of graphene. One major benefit of such systems is the simple ability to tune the chemical potential by…

Two-dimensional (2D) semiconductors have shown great promise in (opto)electronic applications. However, their developments are limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by…

We investigate the stability and the free expansion of a trapped dipolar Fermi gas. We show that stabilizing the system relying on tuning the trap geometry is generally inefficient. We further show that the expanded density profile always…

The choice of electrostatic gating over the conventional chemical doping for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the system's level of…

The theory for the onset of spin density wave order in a metal in two dimensions flows to strong coupling, with strong interactions not only at the `hot spots', but on the entire Fermi surface. We advocate the computation of DC transport in…

Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…

Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass energy filter. In particular, using two-dimensional (2D)…

The superconducting, transport, and structural properties of optimally electron-doped BaFe$_{1.9}$Ni$_{0.1}$As$_{2}$ are investigated by combining the electrical resistance and synchrotron X-ray diffraction measurements at high pressures.…

In the present work, we investigated the electronic and elastic properties in equilibrium and under strain of the type-II Dirac semimetal NiTe$_2$ using density functional theory (DFT). Our results demonstrate the tunability of Dirac nodes'…

Electronic density of states (DOS) at Fermi level has been investigated in ultrathin Ag films grown on Si(111)-(7x7) down to the two dimensional limit of a single atomic layer. Measurement of DOS at Fermi level by scanning tunneling…

Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…

We devise an approach to describe the electronic instabilities of doped multi-walled nanotubes, where each shell has in general a manifold of Fermi points. Our analysis relies on the scale dependence of the different scattering processes,…

The interface between graphene and the ferroelectric superlattice $\mathrm{PbTiO_3/SrTiO_3}$ (PTO/STO) is studied. Tuning the transition temperature through the PTO/STO volume fraction minimizes the adsorbates at the graphene-ferroelectric…

Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging…

Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs) thanks to their unique mechanical properties and enhanced electrostatic control. However, the performance of these…