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This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…
We consider superconductivity in a system with $N$ Fermi surfaces, including intraband and interband effective electron-electron interactions. The effective interaction is described by an $N \times N$ matrix whose elements are assumed to be…
Several materials in the regime of strong spin-orbit interaction such as HgTe, the pyrochlore iridate Pr$_2$Ir$_2$O$_7$, and the half-Heusler compound LaPtBi, as well as various systems related to these three prototype materials, are…
Two-dimensional layered and atomically thin elemental superconductors may be key ingredients in next-generation quantum technologies, if they can be stabilized and integrated into heterostructured devices under ambient conditions. However,…
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…
Recent renewed interest in layered transition metal dichalcogenides stems from the exotic electronic phases predicted and observed in the single- and few-layer limit. Realizing these electronic phases requires preserving the desired…
The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…
The Fermi velocity is one of the key concepts in the study of a material, as it bears information on a variety of fundamental properties. Upon increasing demand on the device applications, graphene is viewed as a prototypical system for…
Randomly distributed traps at the MoS$_2$/SiO$_2$ interface result in non-ideal transport behavior, including hysteresis in MoS$_2$/SiO$_2$ field effect transistors (FETs). Thus traps are mostly detrimental to the FET performance but they…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challenges is identifying the right semiconductor/insulator…
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device…
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are…
2D materials are expected to be favorable channel materials for field-effect transistor (FET) with extremely short channel length because of their superior immunity to short-channel effects (SCE). Graphene, which is the most famous 2D…
The ability of stacks of superconducting tapes to trap large magnetic fields makes them ideal candidates for creating powerful permanent magnets of compact size and mass. Experimentally, several techniques are used to trap the maximum…
Two-dimensional (2D) van der Waals semiconductors show promise for atomically thin flexible and transparent optoelectronic devices in future technologies.However, developing high-performance field-effect transistors (FETs) based on 2D…
We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices'…
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit…