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The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three different sets of samples have been analyzed by means of…
Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention…
Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band…
Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical…
It is shown that the charge susceptibility in nearly half-filled two-dimensional (2D) metals, with technically nested Fermi surface, shows anomaly at the wavevector different from that for the spin susceptibility at low temperatures. Namely…
The close approach of the Fermi energy EF of a Dirac semimetal to the Dirac point ED uncovers new physics such as velocity renormalization,1,2,3 and the Dirac plasma 4,5 at |EF -ED| < kBT, where kBT is the thermal energy. In graphene,…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
Electronic structures of graphene sheet with different defective patterns are investigated, based on the first principles calculations. We find that defective patterns can tune the electronic structures of the graphene significantly.…
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG)…
In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by…
We demonstrate tuning of the Fermi contour anisotropy of two-dimensional (2D) holes in a symmetric GaAs (001) quantum well via the application of in-plane strain. The ballistic transport of high-mobility hole carriers allows us to measure…
Half-metals have fully spin polarized charge carriers at the Fermi surface. Such polarization usually occurs due to strong electron--electron correlations. Recently [Phys. Rev. Lett. {\bf{119}}, 107601 (2017)], we have demonstrated…
Persistent currents driven by a static magnetic flux parallel to the carbon nanotube axis are investigated. Owing to the hexagonal symmetry of graphene the Fermi contour expected for a 2D-lattice reduces to two points. However the electron…
We study a model of strongly interacting spinless fermions on an anisotropic triangular lattice. At half-filling and the limit of strong repulsive nearest-neighbor interactions, the fermions align in stripes and form an insulating state.…
We report thickness-tuned electrical transport and Hall resistivity in highly anisotropic three-dimensional Dirac semimetal ZrTe5 nanosheets. We find that when the thickness of the nanosheet is blow about 40 nm, the system takes a clear…
The branched pattern typically observed through the scanning gate microscopy (SGM) of two dimensional electron gases in the presence of weak, smooth disorder has recently been found to be robust against a very large shift in the Fermi…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
Hydrodynamic electrons in high-mobility graphene devices have demonstrated great potential in establishing an electronic analogue of relativistic quantum fluid in solid-state systems. One of the key requirements for observing viscous…
Nonreciprocal charge transport (NCT) is defined as a phenomenon where electrical resistance depends on the current direction. It has been drawing much attention because it sensitively reflects the symmetry breaking of material systems. A…
We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and…