Related papers: Optimizing the Stability of FETs Based on Two-Dime…
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the…
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…
The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and…
Three-dimensional topological semimetals host a range of interesting quantum phenomena related to band crossing that give rise to Dirac or Weyl fermions, and can be potentially engineered into novel quantum devices. Harvesting the full…
Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support…
Elemental substitution is a proven method of Fermi level tuning in topological insulators, which is needed for device applications. Through static and time resolved photoemission, we show that in MnBi$_2$Te$_4$, elemental substitution of Bi…
An in-depth analysis of valley physics in 2D materials like transition metal dichalcogenides requires the measurement of many material properties as a function of Fermi level position within the electronic band structure. This is normally…
We present an analytic theory unraveling the microscopic mechanism of instabilities within interacting $D$-dimensional Fermi liquid. Our model consists of a $D$-dimensional electron gas subject to an instantaneous electron-electron…
By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi2Se3 single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low…
In the present paper we propose a mechanism of the structural instability with a periodic charge ordering in two-dimensional isotropic conductors with a closed Fermi surface which completely excludes the conventional nesting mechanism. We…
The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic technology faces constraints in material thickness scaling…
We study the influence of anisotropy, treated as a dimensional crossover between 1D and 3D system, on the topological instability induced by a (self-consistent) uniaxial periodic potential. The mechanism on which the instability is based…
Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the…
The effect of strong anisotropy on the Fermi line of a system of correlated electrons is studied in two space dimensions, using renormalization group techniques. Inflection points change the scaling exponents of the couplings, enhancing the…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
We study the electronic instabilities in a 2D Hubbard model where one of the dimensions has a finite width, so that it can be considered as a large array of coupled chains. The finite transverse size of the system gives rise to a discrete…
Topological insulators are of interest for many applications in electronics and optoelectronics, but harnessing their unique properties requires detailed understanding and control of charge injection at electrical contacts. Here we present…
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit…
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…