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The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very…

This paper enumerates new architecture of low power dual-edge triggered Flip-Flop (DETFF) designed at 180nm CMOS technology. In DETFF same data throughput can be achieved with half of the clock frequency as compared to single edge triggered…

Ultrawide bandgap semiconductor gallium oxide (Ga2O3) and its polymorphs have recently attracted increasing attention across physics, materials science, and electronics communities. In particular, the self-organized formation of the…

The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…

Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain ($\beta$). In this paper, we characterize lateral bipolar junction transistors (LBJTs) fabricated on silicon-on-insulator…

Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…

A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide…

Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we…

Josephson junction field-effect transistors (JJFETs) have recently re-emerged as promising candidates for superconducting computing. For JJFETs to perform Boolean logic operations, the so-called gain factor $\alpha_{R}$ must be larger than…

Topology is a key ingredient driving the emergence of quantum devices. Topological field-effect transistor (TFET) has been proposed to outperform the conventional FET by replacing the ON state with topology-protected quantized conductance,…

Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field…

We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN…

The combination of h-BN and high-k dielectrics is required for a top gate insulator in miniaturized graphene field-effect transistors because of the low dielectric constant of h-BN. We investigated the deposition of Y2O3 on h-BN using…

Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…

HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests…

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for…

We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor…

The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and…

In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme…

The performance and scalability of two-dimensional (2D) field-effect transistors (FETs) are strongly influenced by geometry-defined electrostatics. In most 2D FET studies, the gate overlaps with the source and drain electrodes, allowing the…