Related papers: Spin-neutral currents for spintronics
The interface between a ferro-/ferrimagnetic insulator and a normal metal can support spin currents polarized collinear with and perpendicular to the magnetization direction. The flow of angular momentum perpendicular to the magnetization…
The absence of net magnetization, which forbids any stray magnetic fields, is one of the greatest advantages of antiferromagnets in device applications. In conventional antiferromagnets, however, spin current cannot be extracted without the…
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically…
We propose a method to derive the spin current operator for non-collinear Heisenberg antiferromagnets. We show that the spin conductivity calculated by the spectral representation with the spin current satisfies the f-sum rule. We also…
We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in…
It is shown that the current-induced torques between a ferromagnetic layer and an antiferromagnetic layer with a compensated interface vanish when the ferromagnet is aligned with an axis of spin-rotation symmetry of the antiferromagnet. For…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a…
Noncollinear antiferromagnets have promising potential to replace ferromagnets in the field of spintronics as high-density devices with ultrafast operation. To take full advantage of noncollinear antiferromagnets in spintronics…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…
Altermagnet is an emerging antiferromagnetic material subclass that exhibits spin-splitting in momentum space without net global magnetization and spin-orbit-coupling effect. In this work, we develop a model of thermal charge injection…
Current-induced torques on ferromagnetic nanoparticles and on domain walls in ferromagnetic nanowires are normally understood in terms of transfer of conserved spin angular momentum between spin-polarized currents and the magnetic…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
A system exhibiting multiple simultaneously broken symmetries offers the opportunity to influence physical phenomena such as tunneling currents by means of external control parameters. Time-reversal symmetry and inversion symmetry are both…
We propose a concept of half-semiconductor antiferromagnets in which both spin-polarized valence and conduction bands belong to the same spin channel with completely compensated spontaneous magnetization. Using density functional theory…
The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (F's are ferromagnetic layers and O is an oxide spacer) in the presence of magnetic impurities within the barrier, is investigated. We assume that magnetic couplings exist both…
Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have…
Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of…
Spintronics, since its inception, has mainly focused on ferromagnetic materials for manipulating the spin degree of freedom in addition to the charge degree of freedom, whereas much less attention has been paid to antiferromagnetic…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…