Related papers: Spin-neutral currents for spintronics
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
Pure spin currents transport angular momentum without an associated charge flow. This unique property makes them attractive for spintronics applications, such as torque induced magnetization control in nanodevices that can be used for…
Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials,…
Altermagnets is a class of antiferromagnetic materials which has electron bands with lifted spin degeneracy in momentum space but vanishing net magnetization and no stray magnetic fields. Because of these properties, altermagnets have…
Antiferromagnetic spintronics is one of the leading candidates for next-generation electronics. Among abundant antiferromagnets, noncollinear antiferromagnets are promising for achieving practical applications due to coexisting…
We theoretically study the spin and charge currents induced by a spin-motive force in a two-dimensional Dirac semimetal protected by nonsymmorphic symmetries. Glide mirror plane symmetry, a nonsymmorphic symmetry, leads to a constraint to…
The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To…
Te is a naturally p-doped semiconductor with a chiral structure, where an electrical current causes the conduction electrons to become spin polarized parallel to the transport direction. In this paper, we present a comprehensive theoretical…
Spintronic artificial neurons are intriguing building blocks for energy efficient Neuromorphic Computing (NC). Nevertheless, most contemporary implementations rely on symmetry breaking external in plane magnetic fields (H_X) for neuron…
Recent theories of spin-current-induced magnetization reversal are formulated in terms of a spin-mixing conductance $G^{mix}$. We evaluate $G^{mix}$ from first-principles for a number of (dis)ordered interfaces between magnetic and…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes…
Spin orbit interactions are rapidly emerging as the key for enabling efficient current-controlled spintronic devices. Much work has focused on the role of spin-orbit coupling at heavy metal/ferromagnet interfaces in generating…
We develop a theory for spin transported by coherent Neel dynamics through an antiferromagnetic insulator coupled to a ferromagnetic insulator on one side and a current-carrying normal metal with strong spin-orbit coupling on the other. The…
Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an…
We theoretically study the spin-dependent transport in a ferromagnet/super- conductor/ferromagnet double tunnel junction. The tunneling current in the antiferromagnetic alignment of the magnetizations gives rise to a spin imbalance in the…
The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that…
An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous…
We study tunneling in ferromagnet/unconventional superconductor (F/S) junctions. We include the effects of spin polarization, interfacial resistance, and Fermi wavevector mismatch (FWM) between the F and S regions. Andreev reflection (AR)…
Magnetic anisotropy phenomena in bimetallic antiferromagnets Mn$_2$Au and MnIr are studied by first-principles density functional theory calculations. We find strong and lattice-parameter dependent magnetic anisotropies of the ground state…