Related papers: Spin-neutral currents for spintronics
Antiferromagnets (AFMs) exhibit spin arrangements with no net magnetization, positioning them as promising candidates for spintronics applications. While electrical manipulation of the single-crystal AFMs, composed of periodic spin…
We study the effects of spin-flip scatterings on the time-dependent transport properties through a magnetic quantum dot attached to normal and ferromagnetic leads. The transient spin-dynamics as well as the steady-state tunneling…
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient…
Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest…
The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…
By applying density functional theory calculations, we predict that the groundstate of bilayer silicene at certain interlayer distances can be antiferromagnetic. At small electron or hole doping, it becomes half metallic under applied…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
Noncollinear antiferromagnets, such as Mn$_3$Sn and Mn$_3$Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another…
The discovery of altermagnetism offers new opportunities for exploring novel quantum states and developing spintronic devices for enabling momentum dependent spin splitting in compensated systems, while zero net magnetization limit its…
Altermagnetism is an emerging series of unconventional magnetic materials characterized by time-reversal symmetry breaking and spin-split bands in the momentum space with zero net magnetization. Metallic altermagnets offer unique advantages…
Pure spin currents, i.e. the transport of angular momentum without an accompanying charge current, represent a new, promising avenue in modern spintronics from both a fundamental and an application point of view. Such pure spin currents can…
Altermagnets, a recently identified class of magnetic materials, possess a spin-split Fermi surface that results in the so-called spin splitter effect, enabling the generation of a spin current transverse to the injection direction and…
We demonstrate possible scenarios for production of pure spin current and large tunnelling magnetoresistance ratios from elastic co-tunnelling and crossed Andreev reflection across a superconducting junction comprising of normal…
We theoretically demonstrate a simple way to significantly enhance the spin/valley polarizations and tunnel- ing magnetoresistnace (TMR) in a ferromagnetic-normal-ferromagnetic (FNF) silicene junction by applying a circularly polarized…
We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin…
The demonstration of the generation and control of a pure spin current (without net charge flow) by electric fields and/or temperature gradient has been an essential leap in the quest for low-power consumption electronics. The key issue of…
The field of spin electronics (spintronics) was initiated by the discovery of giant magnetoresistance (GMR) for which Fert[1] and Grunberg[2] were awarded the 2007 Nobel Prize for Physics. GMR arises from differential scattering of the…
The recent demonstrations of electrical manipulation and detection of antiferromagnetic spins have opened up a chapter in the spintronics story. In this article, we review the emerging research field that is exploring synergies between…
Using first-principles calculations, we explore the role of an anti-ferromagnetic heavy-metal, L1$_0$-IrMn, as a capping layer in a perpendicular magnetic tunnel junction (\emph{p}-MTJ). A comparative study is conducted by employing…
Giant or tunneling magnetoresistance are physical phenomena used for reading information in commercial spintronic devices. The effects rely on a conserved spin current passing between a reference and a sensing ferromagnetic electrode in a…