We propose a concept of half-semiconductor antiferromagnets in which both spin-polarized valence and conduction bands belong to the same spin channel with completely compensated spontaneous magnetization. Using density functional theory plus Hubbard U (DFT+U) methods, we find a viable approach to achieve the half-semiconductor antiferromagnets through the transition metal (TM) Fe and Cr codoped boron nitride(BN) sheet. Moreover, spin gapless semiconductor antiferromagnets with zero magnetic moment are also achieved in such systems.
@article{arxiv.1308.0253,
title = {Half-Semiconductor antiferromagnets and Spin-Gapless-Semiconductor antiferromagnets},
author = {Junjie He and P. Zhou and N. Jiao and L. Z. Sun and Xiaoshuang Chen and Wei Lu},
journal= {arXiv preprint arXiv:1308.0253},
year = {2013}
}