Related papers: THz intersubband electroluminescence from n-type G…
Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor…
In the experimental electroluminescence (EL) spectra of light-emitting diodes (LEDs) based on N-polar (In,Ga)N/GaN nanowires (NWs), we observed a double peak structure. The relative intensity of the two peaks evolves in a peculiar way with…
N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 {\deg}C do not exhibit any detectable luminescence even at 10 K. In the…
Cascade transition between energy levels has important applications, such as in quantum information protocols and quantum cascade lasers. In two-dimensional heterostructure, the moir\'e superlattice potential can result in multiple…
The electronic and thermoelectric properties of one to four monolayers of MoS$_{2}$, MoSe$_{2}$, WS$_{2}$, and WSe$_{2}$ are calculated. For few layer thicknesses,the near degeneracies of the conduction band $K$ and $\Sigma$ valleys and the…
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to…
We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only…
We present high S/N spectra of the H-beta region in 17 intermediate redshift (0.85 le z le 2.5) quasars. The spectra represent first results of our campaign to test the redshift/luminosity robustness of the so-called Eigenvector 1 (E1)…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
The selective confinement of light holes (LHs) in a tensile-strained germanium (Ge) quantum well is studied by mapping the electronic structure of Ge$_{1-x}$Sn$_x$/Ge/Ge$_{1-x}$Sn$_x$ heterostructures as a function of Sn content, residual…
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the…
This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport.…
Recently, there has been a growing interest in integrated THz photonics for various applications in communications, spectroscopy and sensing. We present a new integrated photonic platform based on active and passive elements integrated in a…
We discuss the energy and vorticity spectra of turbulent superfluid $^4$He in all the temperature range from $T=0$ up to the phase transition "$\lambda$ point", $T_\lambda\simeq 2.17\,$K. Contrary to classical developed turbulence in which…
Special optical structures composed of superconducting nanostructure based on the elemental type-II and layered high-Tc superconductors are proposed. The photonic band structure and the optical S-matrix are calculated for these proposed…
We study the energy spectra of bound states in quantum dots (QDs) formed by an electrostatic potential in two-dimensional topological insulator (TI) and their transformation with changes in QD depth and radius. It is found that, unlike a…
Recent ALICE results demonstrate that over 90\% of light nuclei and anti-nuclei ($d$, $\bar d$) observed in heavy-ion collisions originate from a non-equilibrium, multi-stage process: $\Delta$-resonance production, decay into correlated…
We report on transport in the second Landau level in \emph{in-situ} back-gated two-dimensional electron gases in GaAs/Al$_x$Ga$_{1-x}$As quantum wells. Minimization of gate leakage is the primary heterostructure design consideration.…
Context. Very high-energy (VHE) $\gamma$-ray measurements of distant TeV blazars can be nicely explained by TeV spectra induced by ultra high-energy cosmic rays. Aims. We develop a model for a plausible origin of hard spectra in distant TeV…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…