This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport. We investigate the RF performance of the device. High transconductance of 2 mS/um and current gain cut-off frequency of around 460 GHz makes the device suitable for THz applications. A significant reduction in gate to drain capacitance is observed under relatively higher drain bias. In this regard, the avalanche breakdown phenomenon in highly doped InN junctions is analyzed quantitatively for the first time and is compared to that of Si and InAs.
@article{arxiv.1401.0024,
title = {Design and Analysis of High Frequency InN Tunnel Transistors},
author = {Krishnendu Ghosh and Uttam Singisetti},
journal= {arXiv preprint arXiv:1401.0024},
year = {2014}
}