Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications
Abstract
The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design (TCAD) modeling platform calibrated against experimental measurements. Two-dimensional hydrodynamic simulations are combined with 1-D full-band, atomistic quantum transport calculations to shed light on future DHBT generations whose dimensions are decreased step-by-step, starting from the current device configuration. Simulations predict that a peak transit frequency of around 1.6 THz could be reached in aggressively scaled type-II DHBTs with a total thickness of 256 nm and an emitter width of 37.5 nm. The corresponding breakdown voltage is estimated to be 2.2 V. The investigations are put in perspective with two DHBT performance limiting factors, self-heating and breakdown characteristics.
Keywords
Cite
@article{arxiv.2107.08554,
title = {Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications},
author = {Xin Wen and Akshay Arabhavi and Wei Quan and Olivier Ostinelli and Chhandak Mukherjee and Marina Deng and Sébastien Frégonèse and Thomas Zimmer and Cristell Maneux and Colombo R. Bolognesi and Mathieu Luisier},
journal= {arXiv preprint arXiv:2107.08554},
year = {2021}
}
Comments
10 pages, 11 figures