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We present a very brief overview of some recent gamma-ray observations of selected blazars to reveal an indication for a considerable or even dominant contribution of secondary gamma-rays from electromagnetic cascades to the observable…
Enhancing valley splitting in SiGe heterostructures is a crucial task for developing silicon spin qubits. Complex SiGe heterostructures, sharing a common feature of four-monolayer (4ML) Ge layer next to the silicon quantum well (QW), have…
Two-dimensional materials are an emerging class of new materials with a wide range of electrical and optical properties and potential applications. Single-layer structures of semiconducting transition metal dichalcogenides are gaining…
Recent advancements in spintronics have opened a new avenue in terahertz (THz) radiation sources that may outperform the traditional contact-based metallic counterparts. Inspired by the generation of broadband spintronic THz signals at the…
Recent progress in manufacturing high-electron-mobility transistors and optoelectronic devices highlights the necessity of understanding the charge dynamics and its impact on the optical properties inside heterostructures. Herein, we study…
The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from…
We demonstrate a table-top high-field terahertz (THz) source based on optical rectification of a collimated near-infrared pulse in gallium phosphide (GaP) to produce peak fields exceeding 300 kV/cm with a spectrum centered at 2.6 THz. The…
Wafer-scale growth of two-dimensional semiconductors remains a key challenge for their integration into photonic technologies. While most studies of two-dimensional semiconductors have focused on transition metal dichalcogenides and their…
We considered intersubband electron transitions in an array of one-dimensional chains of spherical quantum dots in the GaAs/Al$_{x}$Ga$_{1-x}$As semiconductor system. The absorption coefficient caused by these transitions was calculated…
The energy and photoluminescence spectra of a two-dimensional electron gas in the fractional quantum Hall regime are studied. The single-particle properties of reversed-spin quasielectrons (QE$_{\rm R}$'s) as well as the pseudopotentials of…
A typical f-electron Kondo lattice system Ce exhibits the well-known isostructural transition, the so-called gamma-alpha transition, accompanied by an enormous volume collapse. Most interestingly, we have discovered that a topological-phase…
We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band…
Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices…
Recent \textit{ab initio} calculations predict 1D dispersive electronic bands confined to the atomic scale cores of dislocations in the wide bandgap (3.84 eV) semiconductor ZnS. We test these predictions by correlating sub-bandgap optical…
X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and density functional theory calculations were used to study the electronic structure of three lanthanide scandates: GdScO3, TbScO3, and DyScO3. X-ray photoelectron…
Intense light-matter interactions and unique structural and electrical properties make Van der Waals heterostructures composed by Graphene (Gr) and monolayer transition metal dichalcogenides (TMD) promising building blocks for tunnelling…
The intermittency of turbulent superfluid helium is explored systematically in a steady wake flow from 1.28 K up to T>2.18K using a local anemometer. This temperature range spans relative densities of superfluid from 96% down to 0%,…
The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied using low-temperature cathodoluminescence (CL) spectroscopic imaging, in combination with scanning transmission electron microscopy (STEM)…
We present results of hard X-ray angle-resolved photoemission spectroscopy and photoemission diffraction measurements performed on high-quality single crystals of the valence transition compound EuPd$_2$Si$_2$ for temperatures 25~K $\leq$ T…
Thermodynamic properties of quasiparticles in a graphene-based structures are investigated. Two graphene superconducting layers (one superconducting component is placed on the top layeredgraphene structure and the other component in the…