Related papers: Gate voltage dependence of noise distribution in r…
In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the…
Using a sample with a split back-gate, a linear frequency dependence of the ac quantum Hall resistance was observed. The frequency coefficient, which is due to dielectric losses produced by leakage current between the 2DEG and the…
A key issue in developing pendular Fabry-Perot interferometers as very accurate displacement measurement devices, is the noise level. The Fabry-Perot pendulums are the most promising device to detect gravitational waves, and therefore the…
A time-dependent bias voltage on a tunnel junction generates a time-dependent modulation of its current fluctuations, and in particular of its variance. This translates into an excitation at frequency $\tilde{f}$ generating correlations…
We describe the measurement and modeling of amplitude noise and phase noise in ultra-high Q nanomechanical resonators made from stoichiometric silicon nitride. With quality factors exceeding 2 million, the resonators' noise performance is…
The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability…
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin…
To reach the next frontier in multimode nonlinear optics, it is crucial to better understand the classical and quantum phenomena of systems with many interacting degrees of freedom -- both how they emerge and how they can be tailored to…
We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…
Recent advances in far-infrared detector technology have led to increases in raw sensitivity of more than an order of magnitude over previous state-of-the-art detectors. With such sensitivity, photon noise becomes the dominant noise…
Developing fast and accurate control and readout techniques is an important challenge in quantum information processing with semiconductor qubits. Here, we study the dynamics and the coherence properties of a GaAs/AlGaAs double quantum dot…
Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning…
We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement…
We calculate the full frequency spectral density of voltage fluctuations in a Single Electron Transistor (SET), used as an electrometer biased above the Coulomb threshold so that the current through the SET is carried by sequential tunnel…
High fidelity single and multi-qubit operations compose the backbone of quantum information processing. This fidelity is based on the ability to couple single- or two-qubit levels in an extremely coherent and precise manner. A necessary…
This article explains phase noise, jitter, and some slower phenomena in digital integrated circuits, focusing on high-demanding, noise-critical applications. We introduce the concept of phase type and time type phase noise. The rules for…
The noise signal of the voltage fluctuations of cathode arcs recorded at different sampling frequencies was analyzed. To explain obtained Fourier spectra for each measurement, a model was developed. The characteristics of the model were…
This letter investigates low frequency 1/ f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density (nT G) at different back gate densities (nBG). The noise…