Related papers: Gate voltage dependence of noise distribution in r…
We study the photoresponse of graphene field effect transistors using scanning photocurrent microscopy in near and far field configurations, and we find that the response of graphene under a source-drain bias voltage away from the contacts…
We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and…
Shot noise is a powerful tool to probe correlations and microscopic transport details that conductance measurements alone cannot reveal. Even in atomic-scale Au devices that are well described by Landauer-B{\"u}ttiker physics, complications…
We investigate critical current noise in short ballistic graphene Josephson junctions in the open-circuit gate-voltage limit within the McWorther model. We find flicker noise in a wide frequency range and discuss the temperature dependence…
The N/Z dependence of projectile fragmentation at relativistic energies has been studied in a recent experiment at the GSI laboratory with the ALADiN forward spectrometer coupled to the LAND neutron detector. Besides a primary beam of…
In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
Low-frequency charge noise induced by fluctuating electrostatic disorder is a major limitation for semiconductor hole spin qubits. Here, we analyze the quasistatic response of a hole spin qubit to individual two-level fluctuators (TLFs). We…
Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors…
In a quantum Hall interferometer, the dependence of the signal on source-drain voltage is controlled by details of the edge physics, such as the velocities of edge modes and the interaction between them and with screening layers. Such…
Solid-state qubits incorporating quantum dots can be read out by gate reflectometry. Here, we theoretically describe physical mechanisms that render such reflectometry-based readout schemes imperfect. We discuss charge qubits,…
The utility of inertial sensors depends on resilience against real-world dynamics and noise. Atom interferometry offers a sensing technology with the advantage of good long-term stability, high sensitivity, and accuracy. High measurement…
We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise…
We report on a quantum form of electronic flicker noise in nanoscale conductors that contains valuable information on quantum transport. This noise is experimentally identified in atomic and molecular junctions, and theoretically analyzed…
We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies…
Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET),…
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate…
We measure the frequency spectra of random spin fluctuations, or "spin noise", in ensembles of (In,Ga)As/GaAs quantum dots (QDs) at low temperatures. We employ a spin noise spectrometer based on a sensitive optical Faraday rotation…
We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. We measure the rf signal reflected by the resonator using homodyne detection. Clear single dot and DQD behavior are…
Many important phenomena in quantum devices are dynamic, meaning that they cannot be studied using time-averaged measurements alone. Experiments that measure such transient effects are collectively known as fast readout. One of the most…