Related papers: Doping profile engineered triple heterojunction TF…
Effects of inhomogeneous doping on the high-$T_c$ cuprate superconductors are studied within the framework of the t-J model. Especially, the boundary between two non-superconducting regions with doping rates much higher and lower than the…
Numerous proposed and developed superconducting fault current limiters and self-limiting transformers limit successfully fault currents but do not provide uninterrupted supplying of consumers. A design investigated in the work combines the…
The regions of hole concentrations $0 \leq x \alt 0.3$ and temperatures $0.005|t| \leq T \leq 0.02|t|$ are studied in the t-J model of Cu-O planes of perovskite high-$T_c$ superconductors. For this purpose self-energy equations for hole and…
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…
The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are used as a model channel material to address issues that we…
The continuous scaling of semiconductor technology has pushed the footprint of logic devices below 50 nm. Currently, logic standard cells with one single fin are being investigated to increase the integration density, although such options…
Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room…
We present a compact model for Tunnel Field Effect Transistors (TFET), that captures sev- eral non-idealities such as the Trap Assisted Tunneling (TAT) originating from interface traps (Dit), along with Verilog-A implementation. We show…
This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport.…
In recent years, a lot of scientific research effort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials like Graphene, Boron Nitride. Theoretical investigation on the…
In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\k{appa} gate dielectric) on the subthreshold characteristics of the tunnel field effect transistors (TFET) for a low operating…
In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all…
Conductivity and Hall coefficient for various types of t-J ladders are calculated as a function of temperature and frequency by numerical diagonalization. A crossover from an incoherent to a coherent charge dynamics is found at a…
A bunching system is proposed for the initial stage of CTF3 which consists of one (two) 3 GHz prebunchers and one 3 GHz travelling wave (TW) buncher with variable phase velocities. The electron beam is emitted from a 140 KV DC gun. Since…
Ferroelectric tunnel junctions (FTJs) have attracted increasing research interest as a promising candidate for non-volatile memories. Recently, significant enhancements of tunneling electroresistance (TER) have been realized through…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
We compute the ground-state fidelity and various correlations to gauge the competition between different orders in two-dimensional t-J-type models. Using exact numerical diagonalization techniques, these quantities are examined for (i) the…
Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully…
This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe…
The thermoelectric efficiency of semiconductors is usually considered in the ohmic electronic transport regime, which is achieved through high doping. Here we consider the opposite regime of low doping where the current-voltage…