Related papers: Doping profile engineered triple heterojunction TF…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
Expressions for generalized charge stiffness constant at zero temperature are derived corresponding to low dimensional hole doped quantum antiferromagnets, describable by the t-J-like models, with a view to understanding fermionic pairing…
Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with…
This paper presents a new \b{eta}-Ga2O3 junctionless double gate Metal-Oxide-Field-Semiconductor-Effect-Transistor (\b{eta}DG-JL-FET) that a P+ packet embedded in the oxide layer (PO-\b{eta}DG-JL-FET) for high-voltage applications. Our goal…
The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…
ThFeAsN$_{1-x}$O$_x$ ($0\leq x\leq0.6$) system with heavy electron doping has been studied by the measurements of X-ray diffraction, electrical resistivity, magnetic susceptibility and specific heat. The non-doped compound exhibits…
Within the t-t'-J model, the doping dependence of charge dynamics in electron-doped cuprates is studied. The conductivity spectrum shows a pseudogap structure with a low-energy peak appearing at $\omega\sim 0$ and an rather sharp…
Scanning tunneling microscopy and transport measurements have been performed to investigate the electronic structure and its temperature dependence in heavily Sr and Na codoped PbTe, which is recognized as one of the most promising…
The impact of the normal-state pseudogap, present in all optimal and underdoped HTS cuprates, on critical currents and critical temperature is surveyed. With the opening of the pseudogap around a doping state of p=0.19 the condensation…
We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally…
Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ~6V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of…
We have engineered the bandgap profile of transmon qubits by combining oxygen-doped Al for tunnel junction electrodes and clean Al as quasiparticle traps to investigate energy relaxation due to quasiparticle tunneling. The relaxation time…
The phase fluctuations of the condensate in doped antiferromagnets, described by a t-t'-J model and a suitable 1/N expansion, provide a mechanism for a Kosterlitz-Thouless (KT) type of transition to a superconducting state below T_{c}. In…
Josephson junctions with three or more superconducting leads have been predicted to exhibit topological effects in the presence of few conducting modes within the interstitial normal material. Such behavior, of relevance for…
Large efforts in improving thermoelectric energy conversion are devoted to energy filtering by nanometer size potential barriers. In this work we perform an analysis and optimization of such barriers for improved energy filtering. We merge…
Mapping complex problems to simpler effective models is a key tool in theoretical physics. One important example in the realm of strongly correlated fermionic systems is the mapping of the Hubbard model to a t-J model which is appropriate…
High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is…
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The…
A normal (non-superconducting) ground state of the t-J model may be variationally approximated by a Gutzwiller-projected wave function. Within this approximation, at small hole doping near half-filling, the normal state favors…
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of…