Related papers: Doping profile engineered triple heterojunction TF…
We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $\Omega$ $\mu$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a…
The superfluid weight, free carrier density, and specific heat of the three-dimensional tJ model are calculated by renormalization-group theory. We find that optimal hole doping for superfluidity occurs in the electron density range of n_i…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
A method to perform spectrum analysis on low power signals between 0.1 and 10 THz is proposed. It utilizes a nanoscale antiferromagnetic tunnel junction (ATJ) that produces an oscillating tunneling anisotropic magnetoresistance, whose…
The evolution of hole and spin dynamics in high temperature superconductors is studied within the self-consistent noncrossing approximation of the t-J model in the small hole density limit. As the doping concentration is increased,…
This letter presents the bulk diamond field-effect transistor (FET) with the highest current value reported at this moment. The goal was to drastically increase the current of this type of device by increasing the total gate width thanks to…
The continuous development of superconducting electronics is encouraging several studies on hybrid Josephson junctions (JJs) based on superconductor/ferromagnet/superconductor (SFS) heterostructures, as either spintronic devices or…
A dome-shaped phase diagram of superconducting critical temperature upon doping is often considered as a hallmark of unconventional superconductors. This behavior, observed in two-dimensional electron gases in $\mathrm{SrTiO}_3$-based…
We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying…
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…
In the present work, we have investigated the performances of p plus minus Al0.3Ga0.7Sb Pocket Implanted L shaped GaSb InAs staggered bandgap SG heterojunction vertical n channel tunnel field effect transistors TFETs of 4 nm thin channel…
A nanostructured thermoelectric device is designed by connecting a double-barrier resonant tunneling heterostructure to two electron reservoirs. Based on Landauers equation and Fermi-Dirac statistics, the exact solution of the heat flow is…
Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptually appealing, the practical implementation of conventional…
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type…
In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage,…
Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…
We study the t-t'-t''-J model with parameters chosen to model an electron-doped high temperature superconductor. The model with one, two and four charge carriers is solved on a 32-site lattice using exact diagonalization. Our results…
We show that the topological gauge structure in the phase string theory of the {\rm t-J} model gives rise to a global phase diagram of antiferromagnetic (AF) and superconducting (SC) phases in a weakly doped regime. Dual confinement and…
When biased at a voltage just below a superconductor's energy gap, a tunnel junction between this superconductor and a normal metal cools the latter. While the study of such devices has long been focussed to structures of submicron size and…
The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with an enormously high ON/OFF ratio. In the last 20 years,…