Related papers: Doping profile engineered triple heterojunction TF…
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the…
Designing tunneling junctions with abrupt on-off characteristics and high current densities is critical for many different devices including backward diodes and tunneling field effect transistors (TFETs). It is possible to get a sharp, high…
The Josephson junction (JJ) is the corner stone of superconducting electronics and quantum information processing. While the technology for fabricating low $T_{c}$ JJ is mature and delivers quantum circuits able to reach the "quantum…
We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel…
We have found that the two dimensional t-J model, for the physical parameter range J/t = 0.4 reproduces the main experimental qualitative features of High-Tc copper oxide superconductors: d-wave superconducting correlations are strongly…
CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent…
Flux tuning of qubit frequencies in superconducting quantum processors is fundamental for implementing single and multi-qubit gates in quantum algorithms. Typical architectures involve the use of DC or fast RF lines. However, these lines…
The doped silicon regions (tubs) in PWFDSOI MOSFET cause significant reduction in OFF current by reducing the number of carriers contributing to the OFF current. The emphasis of the simulation and device physics study on PWFDSOI MOSFET…
Large spiking neural networks (SNNs) require ultra-low power and low variability hardware for neuromorphic computing applications. Recently, a band-to-band tunneling-based (BTBT) integrator, enabling sub-kHz operation of neurons with area…
Field-effect transistors based on band-to-band tunneling (BTBT) have gained a lot of recent interest due to their potential for reducing power dissipation in integrated circuits. In this paper we present a detailed performance comparison…
Tunneling hetero-junctions (THJs) usually induce confined states at the regions close to the tunnel junction which significantly affect their transport properties. Accurate numerical modeling of such effects requires combining the…
Within the t-J model, the charge transport and spin response of the doped bilayer triangular antiferromagnet are studied by considering the bilayer interaction. Although the bilayer interaction leads to the band splitting in the electronic…
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…
We present a theory for tunneling spectroscopy in a break-junction semiconductor device for materials in which the electronic conduction mechanism is hopping transport. Starting from the conventional expression for the hopping current we…
Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for…
We calculate the effects of doping nanostructuration and the patterning of thin films of high-temperature superconductors (HTS) with the aim of optimizing their functionality as sensing materials for resistive transition-edge bolometer…
This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative…
The doping and temperature dependence of the electronic Raman response in cuprate superconductors is studied within the framework of the kinetic energy driven superconducting mechanism for the t-J model. It is shown that the temperature…
Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…
The impact of electrostatic doping level on the dissipative transport of Armchair GNR-TFET is studied using the Quantum Perturbation Theory (QPT) with the Extended Lowest Order Expansion (XLOE) implementation method. Results show that the…