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We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode…

Materials Science · Physics 2015-05-14 S. Tongay , T. Schumann , A. F. Hebard

We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky…

Fission events from Special Nuclear Material (SNM), such as highly enriched uranium or plutonium, can produce simultaneous emission of multiple neutrons and high energy gamma-rays. The observation of time correlations between any of these…

Instrumentation and Detectors · Physics 2011-05-12 M. Sweany , A. Bernstein , N. S. Bowden , S. Dazeley , G. Keefer , R. Svoboda , M. Tripathi

We have demonstrated that GaN Schottky diodes can be used for high energy (64.8 MeV) proton detection. Such proton beams are used for tumor treatment, for which accurate and radiation resistant detectors are needed. Schottky diodes have…

Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…

Instrumentation and Detectors · Physics 2024-12-11 Andreas Gsponer , Philipp Gaggl , Jürgen Burin , Simon Waid , Thomas Bergauer

In ion cancer therapy, high-intensity ion beams are used to treat tumors by taking advantage of the Bragg-Peak. Typical ion therapy centers use particle rates up to $10^{10}$ ions/second for treatment. On the other hand, such intensities…

Instrumentation and Detectors · Physics 2022-02-02 Manuel Christanell , Maximilian Tomaschek , Thomas Bergauer

This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN…

Applied Physics · Physics 2020-10-13 Saurav Roy , Arkka Bhattacharyya , Sriram Krishnamoorthy

Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…

Materials Science · Physics 2026-03-31 Y. Abdedou , A. Fuchs , P. Fuchs , J. Heiler , D. Herrmann , S. Weber , M. Schäfer , J. L'huillier , F. Kaiser , C. Becher , E. Neu

This article describes the design features and the first test measurements obtained during the installation of a novel high resolution 2D neutron detection technique. The technique proposed in this work consists of a boron layer (enriched…

The next generation of very-short-baseline reactor experiments will require compact detectors operating at surface level and close to a nuclear reactor. This paper presents a new detector concept based on a composite solid scintillator…

Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide band gap makes it an…

This study presents a new concept of segmented antineutrino detector based on hexagonal plastic scintillator bars for detecting antineutrinos from a nuclear reactor core. The choice of hexagonal scintillator bars is original and provides…

Instrumentation and Detectors · Physics 2019-12-18 Mustafa Kandemir , Altan Cakir

In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility…

Mesoscale and Nanoscale Physics · Physics 2016-01-05 Antonio Di Bartolomeo

Novel group IVV 2D semiconductors (e.g., GeAs and SiAs) has arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has wide tunable bandgap, excellent thermodynamic stability, and…

Applied Physics · Physics 2020-10-09 Ghada Dushaq , Mahmoud Rasras

We present a simulation-based study of a compact directional neutron detector composed of liquid scintillator, Cesium Iodide, with boron carbide (B4C) moderation, and silicon photomultipliers (SiPMs). Using GEANT4, we explored multiple…

Instrumentation and Detectors · Physics 2025-07-22 J. -H. Chen , M. Mirzakhani , R. Mahapatra , S. Sahoo

Nowadays neutron scattering science is increasing its instrumental power. Most of the neutron sources in the world are pushing the development of their technologies to be more performing. The neutron scattering development is also pushed by…

Instrumentation and Detectors · Physics 2019-08-14 Francesco Piscitelli

A new high-precision detector for studying neutrons from beta-delayed neutron emission and direct reaction studies is proposed. The Neutron dEtector with Xn Tracking (NEXT) array is designed to maintain high intrinsic neutron detection…

The IsoDAR sterile-neutrino search requires a very high intensity neutrino source. For IsoDAR, this high intensity is produced using the high neutron flux from a 60 MeV, 10 mA proton beam striking a beryllium target that floods a sleeve of…

Accelerator Physics · Physics 2019-09-19 Adriana Bungau , Jose Alonso , Larry Bartoszek , Janet M. Conrad , Edward Dunton , Michael H. Shaevitz

We show data from a new type of detector that can be used to determine neutron flux, energy distribution, and direction of neutron motion for both fast and thermal neutrons. Many neutron detectors are plagued by large backgrounds from…

The SIDDHARTA-2 experiment at the DA$\Phi$NE collider aims to perform precision measurements of kaonic atoms X-ray spectroscopy for the investigation of the antikaon-nucleon strong interaction. To achieve this goal, novel large-area Silicon…