Related papers: Silicon carbide diodes for neutron detection
We propose the use of silicon carbide (SiC) for direct detection of sub-GeV dark matter. SiC has properties similar to both silicon and diamond, but has two key advantages: (i) it is a polar semiconductor which allows sensitivity to a…
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse…
Thermal neutron detectors are crucial to a wide range of applications, including nuclear safety and security, cancer treatment, space research, non-destructive testing, and more. However, neutrons are notoriously difficult to capture due to…
A new type of neutron detector, named Stack Structure Solid organic Scintillator (S$^4$), consisting of multi-layer plastic scintillators with capability to suppress low-energy $\gamma$ rays under high-counting rate has been constructed and…
The potential to use neutrinos for nuclear non-proliferation has been heavily debated due to the tension between production abundance and low interaction rate. A newly detected neutrino interaction channel, coherent elastic neutrino-nucleus…
For over 40 years, physicists have considered possible uses for neutrino detectors in nuclear nonproliferation, arms control, and fissile materials security. Neutrinos are an attractive fission signature because they readily pass through…
Silicon carbide (SiC) hosts a number of point defects that are being explored as single-photon emitters for quantum applications. Unfortunately, these quantum emitters lose their photostability when placed in proximity to the surface of the…
Nickel silicide Schottky diodes formed on polycrystalline Si<P> films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon…
Strip and pixels sensors, fabricated on high resistivity silicon substrate, normally of p-type, are used in detectors for High Energy Physics (HEP) typically in a hybrid detector assembly. Furthermore, and owing to their inherent advantages…
We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si…
A 3-D position sensitive neutron detector is being developed based on a plastic scintillator array. A double side SiPM readout is used to determine the depth of interaction (DOI) in each scintillator unit. In the preliminary test, the DOI…
The next generation of radioactive ion beam facilities, which will give experimental access to many exotic nuclei, are presently being developed. These facilities will make it possible to study very short lived exotic nuclei with extreme…
Diamond and Silicon Carbide (SiC) are promising wide band-gap semiconductors for power electronics, SiC being more mature especially in term of large wafer size (that has reached 200 mm quite recently). Nitrogen impurities are often used in…
Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large…
There exists an enormous interest for the study of very high energy domain in particle physics, both theoretically and experimentally, in the aim to construct a general theory of the fundamental constituents of matter and of their…
We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced…
Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of…
First prototypes of large area, p-n junction, silicon carbide (SiC) detectors have been produced as part of an ongoing programme to develop a new particle identification wall for the focal plane detector of the MAGNEX magnetic spectrometer,…
Nowadays neutron facilities are going toward higher fluxes, e.g. the European Spallation Source (ESS) in Lund (Sweden), and this translates into a higher demand in the instrument performances. Because of its favorable properties,He-3 has…
This study demonstrates a substantial enhancement of breakdown voltage in $\beta$-Ga$_2$O$_3$ Schottky diodes through an approach that combines fast neutron irradiation with controlled post-irradiation electro-thermal annealing. Devices…