Boron-related defects in n-type 4H-SiC Schottky barrier diodes

Tihomir Knežević; Eva Jelavić; Yuichi Yamazaki; Takeshi Ohshima; Takahiro Makino; Ivana Capan

doi:10.3390/ma16093347

Boron-related defects in n-type 4H-SiC Schottky barrier diodes

Materials Science 2023-05-10 v1

Authors: Tihomir Knežević , Eva Jelavić , Yuichi Yamazaki , Takeshi Ohshima , Takahiro Makino , Ivana Capan

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Abstract

We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD) crystal growth. Boron incorporation was found to lead to the appearance of at least two boron-related deep-level defects, namely, shallow (B) and deep boron (D-center), with concentrations as high as 2 x 1015 cm-3. Even though the boron concentration exceeded the nitrogen doping concentration by almost an order of magnitude, the steady-state electrical characteristics of the n-type 4H-SiC SBDs did not deteriorate.

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@article{arxiv.2303.09810,
  title  = {Boron-related defects in n-type 4H-SiC Schottky barrier diodes},
  author = {Tihomir Knežević and Eva Jelavić and Yuichi Yamazaki and Takeshi Ohshima and Takahiro Makino and Ivana Capan},
  journal= {arXiv preprint arXiv:2303.09810},
  year   = {2023}
}

Boron-related defects in n-type 4H-SiC Schottky barrier diodes

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