Related papers: $\alpha$-In$_2$Se$_3$ based Ferroelectric-Semicond…
Piezoelectric FET (PeFET) is a promising non-volatile-memory (NVM) device that integrates a piezoelectric (PE)/ferroelectric (FE) capacitor with a 2D transistor. It uses the polarization of the FE capacitor for bit-storage and…
In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new…
Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $\alpha$ and $\beta$' phases, respectively. In this work, we utilise angle-resolved photoelectron…
Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects due to the versatile band structure of semiconductors and…
The interfacial phase-change memory (iPCM) GeTe/Sb2Te3, promising candidates for the next generation non-volatile random-access memories, exhibits fascinating topological properties. Depending on the atomic-layer-stacking sequence of the…
The memory wall bottleneck is a key challenge across many data-intensive applications. Multi-level FeFET-based embedded non-volatile memories are a promising solution for denser and more energy-efficient on-chip memory. However, reliable…
2D van der Waals ferroelectrics, particularly alpha-In2Se3, have emerged as an attractive building block for next-generation information storage technologies due to their moderate band gap and robust ferroelectricity stabilized by dipole…
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide…
All-electric-controlled nonvolatile spin field-effect transistors (SFETs) based on two-dimensional (2D) multiferroic van der Waals (vdW) heterostructures hold great promise for advanced spintronics applications. However, their performance…
Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, {\alpha}-In$_{2}$Se$_{3}$ has drawn particular attention…
Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibility with conventional semiconductor processing techniques.…
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the…
Ferroelectric tunnel junctions offer potential for non-volatile memory with low power, fast switching, and scalability, but their performance is limited by a high resistance-area product and a low tunnel electroresistance ratio. To address…
Thicknesses-dependent performance of metal-two-dimensional (2D) semiconductor junctions (MSJ) in electronics/optoelectronics have attracted increasing attention, but till present, people have little knowledge about the micro-mechanism of…
Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptually appealing, the practical implementation of conventional…
Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the…
Arrays of Vortex Transitional (VT) memory cells with functional density up to $1 Mbit/cm^2$ have been designed, fabricated, and successfully demonstrated. This progress is due to recent advances in design optimization and in superconductor…
The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relative alignment of magnetic moments of the two ferromagnetic…
Magnetic van der Waals (vdW) materials have attracted massive attention because of their academic interest and application potential for the past few years. Its main advantage is the intrinsic two-dimensionality, enabling much smaller…