Related papers: Crossover Between Weak Antilocalization and Weak L…
Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic…
For antiferromagnetically coupled Fe/Cr multilayers the low field contribution to the resistivity, which is caused by the domain walls, is strongly enhanced at low temperatures. The low temperature resistivity varies according to a power…
Weak antilocalization (WAL) effect due to the interference corrections to the conductivity has been studied experimentally in a strained InGaAs/InP quantum well structure. From measurements in tilted magnetic filed, it was shown that both…
Oxide heterostructures allow for detailed studies of 2D electronic transport phenomena. Herein, different facets of magnetotransport in selected spin-orbit-coupled systems are analyzed and characterized by their single-band and multiband…
MXenes stand out from other 2D materials because they combine very good electrical conductivity with hydrophilicity, allowing cost-effective processing as thin films. Therefore, there is a high fundamental interest in unraveling the…
A magnetoconductivity formula is presented for the surface states of a magnetically doped topological insulator. It reveals a competing effect of weak localization and weak antilocalization in quantum transport when an energy gap is opened…
The layered van der Waals ferromagnetic Fe$_3$GeTe$_2$ harbours an unconventional interplay between topology and magnetism, leading to a large anomalous Hall conductivity at low temperatures. Here, we investigate the temperature dependence…
Manifestations of quantum interference effects in macroscopic objects are rare. Weak localization is one of the few examples of such effects showing up in the electron transport through solid state. Here we show that weak localization…
The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this…
We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are…
Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the quantum well plane. Spin and phase relaxation times are…
We study the dimensional crossover of weak localization in strongly anisotropic systems. This crossover from three-dimensional behavior to an effective lower dimensional system is triggered by increasing temperature if the phase coherence…
We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double- gate amorphous InGaZnO thin-film transistors.…
We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find…
The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states…
The exchange and correlation $E_{xc}$ of strongly correlated electrons in 2D layers of finite width are studied as a function of the density parameter $r_s$, spin-polarization $\zeta$ and the temperature $T$. We explicitly treat…
Motivated by the remarkable experimental realizations of $f$-electron superlattices, e.g. CeIn$_3$/LaIn$_3$- and CeCoIn$_5$/YbCoIn$_5$- superlattices, we analyze the formation of heavy electrons in layered $f$-electron superlattices by…
We analyze the effect of weak localization (WL) and weak antilocalization (WAL) in the electronic transport through HgTe/CdTe quantum wells. We show that for increasing Fermi energy the magnetoconductance of a diffusive system with inverted…
The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular…
Milling of 2D flakes is a simple method to fabricate nanomaterial of any desired shape and size. Inherently milling process can introduce the impurity or disorder which might show exotic quantum transport phenomenon when studied at the low…