Related papers: Crossover Between Weak Antilocalization and Weak L…
Topological insulators (TI) are a new class of quantum materials with insulating bulk enclosed by topologically protected metallic boundaries. The surface states of three-dimensional TIs have spin helical Dirac structure, and are robust…
We discuss the influence of the electromagnetic environment and the electron-electron interaction on the weak localization correction to the conductivity of a disordered metal. The theory of this phenomenon for sufficiently high…
Quantum interference between time-reversed electron paths in two dimensions leads to the well-known weak localization correction to resistance. If spin-orbit coupling is present, the resistance correction is negative, termed weak…
This paper is devoted to the temperature dependence of the resistivity in Si- MOS samples over the wide range of densities in the ``metallic phase'' (n>n_c) but not too close to the critical density n_c. Three domains of different behavior…
In this study, we address the phase coherent transport in a sub-micrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well…
We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructures. The usual logarithmic temperature dependencies for zero…
The results of experimental study of the magnetoconductivity of 2D electron gas caused by suppression of the interference quantum correction in HgTe single quantum well heterostructure with the inverted energy spectrum are presented. It is…
Phase change materials can be reversibly switched between amorphous and crystalline states and often show strong contrast in the optical and electrical properties of these two phases. They are now in widespread use for optical data storage,…
Weak antilocalization (WAL), an increase in the electrical conductivity at low temperatures associated with the suppression of electron localization due to quantum interference effects, is often observed in topological materials. In this…
Transport signatures of exchange gap opening because of magnetic proximity effect (MPE) are reported for bilayer structures of Bi2Se3 thin films on yttrium iron garnet (YIG) and thulium iron garnet (TmIG) of perpendicular magnetic…
Weak antilocalization (WAL) is expected whenever strong spin-orbit coupling or scattering comes into play. Spin-orbit coupling in the bulk states of a topological insulator is very strong, enough to result in the topological phase…
Strongly correlated Kondo insulator SmB6 is known for its peculiar low temperature residual conduction, which has recently been demonstrated to arise from a robust metallic surface state, as predicted by the theory of topological Kondo…
The interplay between superconducting fluctuations (SFs) and weak localization (WL) has been probed by temperature dependent resistance [R(T)] and magnetoresistance (MR) measurements in two-dimensional disordered superconducting TiN thin…
We investigate the effects of magnetic and electric fields on electron wavefunction interactions in single walled carbon nanotube bundles. The magnetoresistance measurements performed at 4.2K and the dependence of the data upon the electric…
In disordered transition-metal dichalcogenide (TMD) superconductor, both the strong spin-orbit coupling (SOC) and disorder show remarkable effects on superconductivity. However, the features of SOC and disorder were rarely detected…
Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO$_3$/SrTiO$_3$ interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals…
Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer…
We report low-temperature transport measurements in strained InAs/Ga0.68In0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance…
We examine the effects of electron-electron interactions on transport between edge states in a multilayer integer quantum Hall system. The edge states of such a system, coupled by interlayer tunneling, form a two-dimensional, chiral metal…
We derive a closed-form expression for the weak localization (WL) corrections to the magnetoconductivity of a 2D electron system with arbitrary Rashba $\alpha$ and Dresselhaus $\beta$ (linear) and $\beta_3$ (cubic) spin-orbit interaction…