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Related papers: Single-electron operation of a silicon-CMOS 2x2 qu…

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Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum…

We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…

Mesoscale and Nanoscale Physics · Physics 2023-07-19 A. C. Betz , R. Wacquez , M. Vinet , X. Jehl , A L. Saraiva , M. Sanquer , A. J. Ferguson , M. F. Gonzalez-Zalba

We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array…

Mesoscale and Nanoscale Physics · Physics 2024-07-23 Yi Luo , Xiao-Fei Liu , Zhi-Hai Liu , Weijie Li , Shili Yan , Han Gao , Haitian Su , Dong Pan , Jianhua Zhao , Ji-Yin Wang , H. Q. Xu

Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs…

Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required,…

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…

Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…

The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Vincent I. Conrad , Andrew D. Greentree , David N. Jamieson , Lloyd C. L. Hollenberg

Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising…

We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive…

Mesoscale and Nanoscale Physics · Physics 2011-10-20 C. H. Yang , W. H. Lim , F. A. Zwanenburg , A. S. Dzurak

We investigate coherent control of a single electron trapped in a semiconductor quantum dot. Control is enabled with a strong laser field detuned with respect to the electron light-hole optical transitions. For a realistic experimental…

Other Condensed Matter · Physics 2007-05-23 Francois Dubin , Gavin K. Brennen

Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 I. Shorubalko , A. Pfund , R. Leturcq , M. T. Borgström , F. Gramm , E. Müller , E. Gini , K. Ensslin

Single qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. While high fidelity single qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT…

Quantum Physics · Physics 2018-02-02 D. M. Zajac , A. J. Sigillito , M. Russ , F. Borjans , J. M. Taylor , G. Burkard , J. R. Petta

Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We…

We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate…

Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration of quantum dots formed in Ge/Si core/shell nanowires is typically performed by measuring the current through…

Mesoscale and Nanoscale Physics · Physics 2023-07-11 J. H. Ungerer , P. Chevalier Kwon , T. Patlatiuk , J. Ridderbos , A. Kononov , D. Sarmah , E. P. A. M. Bakkers , D. Zumbühl , C. Schönenberger

Constructing a quantum computer capable of broad and important applications is likely to require millions of addressable physical qubits, posing the challenge of large-scale integration of quantum systems with classical electronics. Fully…

Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…

Mesoscale and Nanoscale Physics · Physics 2014-11-11 C. H. Yang , A. Rossi , N. S. Lai , R. Leon , W. H. Lim , A. S. Dzurak

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be…

Mesoscale and Nanoscale Physics · Physics 2016-12-21 R. Maurand , X. Jehl , D. Kotekar Patil , A. Corna , H. Bohuslavskyi , R. Laviéville , L. Hutin , S. Barraud , M. Vinet , M. Sanquer , S. De Franceschi

We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 G. J. Podd , S. J. Angus , D. A. Williams , A. J. Ferguson