Related papers: Gate-controllable electronic trap detection in die…
Maintaining comfortable temperatures for buildings, humans, and devices consumes a substantial portion of global energy, underscoring the urgent need for energy-efficient thermoregulation technologies. Dynamic radiative thermal emitters…
Heavy polar molecules can be used to measure the electric dipole moment of the electron, which is a sensitive probe of physics beyond the Standard Model. The value is determined by measuring the precession of the molecule's spin in a plane…
We investigated the electrical properties of a unipolar organic device with traps that were intentionally inserted into a particular position in the device. Depending on their inserted position, the traps significantly alter the charge…
Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator…
We suggest the numerical approach to detect eigenfrequencies of trapped modes in waveguides or guided waves in diffraction gratings. At the same time, the approach works perfectly for computation of systems with finitely many scattering…
A high-performance time-of-flight (TOF) MRPC wall is being built for the CBM experiment at FAIR for charged hadron identification. The detector control system for the TOF system will be based on EPICS. All components like power supplies for…
Microwave near-field quantum control of spin and motional degrees of freedom of 25Mg+ ions can be used to generate two-ion entanglement, as recently demonstrated in Ospelkaus et al. [Nature 476, 181 (2011)]. Here, we describe additional…
We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages. Temperature dependence of…
Electrical charging of metal surfaces due to photoelectric generation of carriers is of concern in trapped ion quantum computation systems, due to the high sensitivity of the ions' motional quantum states to deformation of the trapping…
The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands…
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…
Extended Floating Gate Field Effect Transistors (EGFETs) are CMOS-compatible floating gate devices capable of detecting charges on their sensing area by the relative shifts in current-voltage (I-V) characteristics. The I-V shifts are…
Fluorescence collection sets the efficiency of state detection and the rate of entanglement generation between remote trapped ion qubits. Despite efforts to improve light collection using various optical elements, solid angle capture is…
Experimental evidence indicating the beneficial impact of a phosphorous diffusion gettering (PDG) in the reduction of trapping centers is shown, as observed by means of inductively coupled photoconductance (PC) decay and lifetime…
The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-electron interactions has been used in modeling the MIT phenomena…
Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric 3D structures enable high trap depth, but…
Grating magneto-optical traps are an enabling quantum technology for portable metrological devices with ultracold atoms. However, beam diffraction efficiency and angle are affected by wavelength, creating a single-optic design challenge for…
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of…
In this work, we investigate the dynamics of a single electron surface trap, embedded in a self-assembly metallic double-dot system. The charging and discharging of the trap by a single electron is manifested as a random telegraph signal of…
Magneto-optical traps on atom chips are usually restricted to small atomic samples due to a limited capture volume caused primarily by distorted field configurations. Here we present a magneto-optical trap with minimized distortions based…