Experimental evidence indicating the beneficial impact of a phosphorous diffusion gettering (PDG) in the reduction of trapping centers is shown, as observed by means of inductively coupled photoconductance (PC) decay and lifetime measurements carried out on upgraded metallurgical-grade silicon (UMG-Si) wafers. The presence of trapping species dominating the long time range of the PC decay of UMG material (slow traps), which is effectively removed after a PDG conducted at 780 Celsius, is detected. Notwithstanding, a second trapping mechanism, characterized by a shorter time constant, still governs the response at very low injection levels after the gettering. Furthermore, the beneficial effect of the PDG is studied as a function of processing time, showing minority carrier bulk lifetime improvements up to 18-fold, up to the range of 70 us. Thereby, the way for developing gettering strategies capable of successfully removing trap centers and improving the bulk lifetime of unconventional Si material is paved.
@article{arxiv.2101.07145,
title = {Phosphorous Diffusion Gettering of Trapping Centers in Upgraded Metallurgical-Grade Solar Silicon},
author = {Sergio Catalán-Gómez and Nerea Dasilva-Villanueva and David Fuertes Marrón and Carlos del Cañizo},
journal= {arXiv preprint arXiv:2101.07145},
year = {2021}
}