Related papers: Gate-controllable electronic trap detection in die…
Mid-infrared (MIR) emitters are critical components in advanced photonic systems, driving progress in fields such as chemical sensing, environmental monitoring, medical diagnostics, thermal imaging and free-space communications.…
We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than…
We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta$_2$NiSe$_5$ investigated by time- and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of…
This manuscript presents a novel method for characterizing the permittivities of low-loss dielectric slabs in sub-terahertz (sub-THz) frequencies, specifically above 100 GHz using a quasi-optical system. The algorithm is introduced with…
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and…
We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To…
In this paper, a new Volt/Var Control (VVC) scheme is proposed to facilitate the coordination between the conventional VVC devices and the new smart PV inverters to provide an effective voltage control on a system with high PV penetration.…
We demonstrate a technique for transferring $^{226}$Ra atoms from a 3-dimensional magneto-optical-trap (MOT) into a standing wave optical dipole trap (ODT) in an adjacent chamber. The resulting small trapping volume (120 $\mu$m in diameter)…
Due to the increasing popularity of DC loads and the potential for higher efficiency, DC microgrids are gaining significant attention. DC microgrids utilize multiple parallel converters to deliver sufficient power to the load. However, a…
The motion of an ion in a radiofrequency (rf) Paul trap is described by the Mathieu equation and the associated stability parameters that are proportional to the rf and dc electric field gradients. Here, a higher-order, iterative method to…
We demonstrate an optical waveguide device, capable of supporting the high, in-vacuum, optical power necessary for trapping a single atom or a cold atom ensemble with evanescent fields. Our photonic integrated platforms, with suspended…
Nanoscale devices are being extensively studied for their tunable electronic and optical properties, but the influence of impurities and defects is amplified at these length scales and can lead to poorly understood variations in…
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior.…
We demonstrate experimentally an efficient control of light intensity distribution inside a random scattering system. The adaptive wavefront shaping technique is applied to a silicon waveguide containing scattering nanostructures, and the…
Electrons trapped on the surface of cryogenic substrates (liquid helium, solid neon or hydrogen) are an emerging platform for quantum information processing made attractive by the inherent purity of the electron environment, the scalability…
We report experimental measurements of the rates of blackbody radiation-induced transitions between high-lying (n>60) S, P and D Rydberg levels of rubidium atoms in a magneto-optical trap using a hybrid field ionization and state-selective…
We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film…
Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…
The electronic band gap in conventional semiconductor materials, such as silicon, is fixed by the material's crystal structure and chemical composition. The gap defines the material's transport and optical properties and is of great…
In moir\'e heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic…