Related papers: Gate-controllable electronic trap detection in die…
Partially gated two-dimensional electron systems (2DES) represent the basic building block of prospective optoelectronic devices, including electromagnetic detectors and sources. At the same time, the electrodynamic properties of such…
Negative capacitance field-effect transistors (NC-FETs) have attracted wide interest as promising candidates for steep-slope devices, and sub-60 mV/decade switching has been demonstrated in NC-FETs with various device structures and…
Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here, we demonstrate memcapacitor structures utilizing a quasi…
This paper discusses the transmission line pulse (TLP) analysis, generally used for electrostatic discharge (ESD) device characterization, as high potential usable tool also for non-ESD structures. TLP technique, combined with DC and pulsed…
One of the outstanding challenges for ion trap quantum information processing is to accurately detect the states of many ions in a scalable fashion. In the particular case of surface traps, geometric constraints make imaging perpendicular…
Trapped, laser-cooled ions produce intense fluorescence. Detecting this fluorescence enables efficient measurement of quantum state of qubits based on trapped atoms. It is desirable to collect a large fraction of the photons to make the…
Diffraction gratings integrated into an atomic, molecular, and optical (AMO) setup offer a compact and efficient route toward atom cooling and trapping, thus preparing magneto-optical traps (MOT) for insertion into future scalable quantum…
Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited…
Cold-atom experiments which measure Fermi-gas properties near unitarity confine fermionic atoms to a region of space using trapping potentials of various shapes. The presence of a trapping potential introduces a new characteristic physical…
A dielectric-modulated double gate bilayer electrodes organic thin-film transistor (DMDGBE-OTFT) based sensor is proposed for label-free biomolecule detection. The double gate of DMDGBE-OTFT is used for creating two symmetrical gates…
We propose a new spectroscopic method for measuring weak transitions in cold and trapped atoms, which exploits the long interaction times and tight confinement offered by dark optical traps together with an electron shelving technique to…
We demonstrate direct evaporative cooling of $^{87}$Rb atoms confined in a dimple trap produced by an atom chip. By changing the two chip currents and two external bias fields, we show theoretically that the trap depth can be lowered in a…
Results of DC and frequency dependent conductivity in the quantum limit, i.e. hw > kT, for a broad range of dopant concentrations in nominally uncompensated, crystalline phosphorous doped silicon and amorphous niobium-silicon alloys are…
Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity…
Physics based numerical simulation has been carried out to probe the sub-gap density of states (DOS) and underlying electron transport properties of amorphous oxide based thin film transistors (TFTs). The DOS model of TFTs consists of…
In electronic structure calculations the optimized effective potential (OEP) is a method that treats exchange interactions exactly using a local potential within density-functional theory (DFT). We present a method using density functional…
We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent…
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…
Surface ion traps are among the most promising technologies for scaling up quantum computing machines, but their complicated multi-electrode geometry can make some tasks, including compensation for stray electric fields, challenging both at…
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing…