Related papers: Gate-controllable electronic trap detection in die…
We present measurements and calculations of the trap loss rate for laser cooled Rb atoms confined in either a magneto-optic or a magnetic quadrupole trap when exposed to a room temperature background gas of Ar. We study the loss rate as a…
Silicon offers an attractive material platform for hardware realization of quantum computing. In this study, a microscopic stochastic simulation method is developed to model the effect of random interface charge traps in silicon…
Recent advances in quantum information processing with trapped ions have demonstrated the need for new ion trap architectures capable of holding and manipulating chains of many (>10) ions. Here we present the design and detailed…
VO2 material is promising for developing energy-saving "smart window", owing to its thermochromic property induced by metal-insulator transition (MIT). However, its practical application is greatly limited by the relatively high critical…
Surface ion traps with two-dimensional layouts of trapping regions are natural architectures for storing large numbers of ions and supporting the connectivity needed to implement quantum algorithms. Many of the components and operations…
We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer…
This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…
The dual-fiber optical trap, owing to its high sensitivity and facile miniaturization, holds significant actual application value in fields such as high-precision metrology of mechanical quantities and biological manipulation. The…
We have studied magneto-optical traps (MOTs) for efficient on-line trapping of radioactive atoms. After discussing a model of the trapping process in a vapor cell and its efficiency, we present the results of detailed experimental studies…
Understanding defects in atomically thin van der Waals (vdW) semiconductors is essential for advancing their use in next-generation optoelectronic and photovoltaic devices. Here, we apply a combination of various impedance spectroscopy…
Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…
Electron diffraction through a thin patterned silicon membrane can be used to create complex spatial modulations in electron distributions by varying the intensity of different reflections using parameters such as crystallographic…
The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. Here, the full subgap DoS of amorphous InGaZnO (a-IGZO) TFTs,…
A Metal-dielectric-topological insulator capacitor device based on hBN-encapsulated CVD grown Bi2Se3 is realized and investigated in the radio frequency regime. The RF quantum capacitance and device resistance are extracted for frequencies…
We have observed trapping of electrons in an electrostatic trap formed over the surface of liquid helium-4. These electrons are detected by a Single Electron Transistor located at the centre of the trap. We can trap any desired number of…
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…
We utilize the optical transitions of Yb$^{2+}$ excited by an ultraviolet optical parametric amplifier to probe electron trap liberation in MgF$_{2}$ via the observation of a photoluminescence enhancement effect induced by a subsequent…
We have used diffraction gratings to simplify the fabrication, and dramatically increase the atomic collection efficiency, of magneto-optical traps using micro-fabricated optics. The atom number enhancement was mainly due to the increased…
We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an…
Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer…