Trapping electrons in electrostatic traps over the surface of helium
Mesoscale and Nanoscale Physics
2009-11-11 v1
Abstract
We have observed trapping of electrons in an electrostatic trap formed over the surface of liquid helium-4. These electrons are detected by a Single Electron Transistor located at the centre of the trap. We can trap any desired number of electrons between 1 and . By repeatedly ( times) putting a single electron into the trap and lowering the electrostatic barrier of the trap, we can measure the effective temperature of the electron and the time of its thermalisation after heating up by incoherent radiation.
Keywords
Cite
@article{arxiv.cond-mat/0611756,
title = {Trapping electrons in electrostatic traps over the surface of helium},
author = {E. Rousseau and Y. Mukharsky and D. Ponarine and O. Avenel and E. Varoquaux},
journal= {arXiv preprint arXiv:cond-mat/0611756},
year = {2009}
}
Comments
Presented at QFS06 - Kyoto, to be published in J. Low Temp. Phys., 6 pages, 3 figures