Related papers: Gate-controllable electronic trap detection in die…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
Electrostatic force microscopy at cryogenic temperatures is used to probe the electrostatic interaction of a conductive atomic force microscopy tip and electronic charges trapped in localized states in an insulating layer on a…
We study a scheme for electrical detection of the spin resonance (ESR) of a single electron trapped near a Field Effect Transistor (FET) conduction channel. In this scheme, the resonant Rabi oscillations of the trapped electron spin cause a…
The choice of electrostatic gating over the conventional chemical doping for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the system's level of…
The image-charge detection provides a new direct method for the detection of the Rydberg transition in electrons trapped on the surface of liquid helium. The interest in this method is motivated by the possibility to accomplish the spin…
Cyclotron resonance (CR) is considered one of the fundamental phenomena in conducting systems. In this paper, we study CR in a gated two-dimensional (2D) electron system (ES). Namely, we analyze the absorption of electromagnetic radiation…
Trapping lithium with a big number in a simplified experimental setup has difficulties and challenges today. In this paper, we experimentally demonstrate the enhancement of \textsuperscript{6}Li trapping efficiency in a three-dimensional…
Magneto-optical traps are central to atomic and molecular quantum technologies and precision tests of fundamental physics, where both sensitivity and bandwidth scale strongly with atom number and loading rate. We demonstrate that employing…
Accurate detection and characterization of nanoparticles within confined spaces is crucial for applications ranging from nanofluidics to biotechnology. We present a novel approach that combines interferometric scattering (iSCAT) detection…
The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical…
In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have been subjected to constant voltage stress (CVS) conditions at…
Typically, amorphous organic materials contain high density of traps. Traps hinder charge transport and, hence, affect various working parameters of organic electronic devices. In this paper we suggest a simple but reliable method for the…
Crystalline organic semiconductors, bonded by weak van der Waals forces, exhibit macroscopic properties that are very similar to those of inorganic semiconductors. While there are many open questions concerning the microscopic nature of…
Hyperparallel quantum information processing outperforms its traditional parallel one in terms of channel capacity, low loss rate, and processing speed. We present a way for implementing a robust hyper-parallel optical controlled-phase-flip…
This paper address the optimal voltage control problem of distribution systems with high penetration of inverter-based renewable energy resources, under inaccurate model information. We propose the online exponential barrier method that…
The ability to control the location of nanoscale objects in liquids is essential for fundamental and applied research from nanofluidics to molecular biology. To overcome their random Brownian motion, the electrostatic fluidic trap creates…
Trapped-ion quantum computers based on the quantum charge-coupled device architecture require on the order of ten trap electrodes per qubit, making the number of vacuum feedthroughs a bottleneck at the system scale. Time-division…
We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
We describe an approach to optically trapping small, chemically stable molecules at cryogenic temperatures by buffer-gas loading a deep optical dipole trap. The ~10 K trap depth will be produced by a tightly-focused, 1064-nm cavity capable…