Related papers: Spin orbit field in a physically defined p type MO…
In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of…
We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field…
Spin--orbit interaction (SOI) plays a fundamental role in many low-dimensional semiconductor and hybrid quantum devices. In the rapidly evolving field of semiconductor spin qubits, SOI is an essential ingredient that can allow for ultrafast…
We describe the simultaneous effects of the spin-orbit (SO) perturbation and a magnetic field $B$ on a disk shaped quantum dot (QD). {As it is known the} combination of electrostatic forces among the $N$ electrons confined in the QD and the…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
We study electron transport in a double quantum dot in the Pauli spin blockade regime, in the presence of strong spin-orbit coupling. The effect of spin-orbit coupling is incorporated into a modified interdot tunnel coupling. We elucidate…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra…
The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin…
We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map…
We perform transport measurements on double quantum dots defined in Ge/Si core/shell nanowires and focus on Pauli spin blockade in the regime where tens of holes occupy each dot. We identify spin blockade through the magnetic field…
Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle,…
We report a successful measurement of the magnetic field-induced spin singlet-triplet transition in silicon-based coupled dot systems. Our specific experimental scheme incorporates a lateral gate-controlled Coulomb-blockaded structure in Si…
We consider determination of spin-orbit (SO) coupling constants for the two-dimensional electron gas from measurements of electric properties in rotated in-plane magnetic field. %Due to the interplay Due to the SO coupling the electron…
Spin-orbit coupling is key to all-electrical control of quantum-dot spin qubits, and is frequently stronger for holes than for electrons. Here we investigate Pauli spin blockade for two heavy holes in a gated double quantum dot in an…
Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we…
We investigate Kondo effect and spin blockade observed on a many-electron quantum dot and study the magnetic field dependence. At lower fields a pronounced Kondo effect is found which is replaced by spin blockade at higher fields. In an…
Coupled spin evolution and tunneling together with the relaxation and decoherence effects are studied for the double quantum dot formed in a semiconductor nanowire and driven by the periodic electric field. Such system represents a model of…
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at…
Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB),…