Related papers: Spin orbit field in a physically defined p type MO…
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
We characterize numerically and analytically the signatures of the spin-orbit interaction in a two-electron GaAs double quantum dot in the presence of an external magnetic field. In particular, we obtain the return probability of the…
Spin-dependent transport measurements through a double quantum dot are a valuable tool for detecting both the coherent evolution of the spin state of a single electron as well as the hybridization of two-electron spin states. In this paper,…
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits.…
In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin orbit coupling is equivalent to an effective magnetic field B_so which has the opposite sign for s_z=1/2 spin electrons. When the external magnetic…
We study the influence of spin-orbit coupling on the hole states in InAs/GaAs quantum dots grown on [001]- and [111]-oriented substrates belonging to symmetry point groups: C2v, C3v and D2d. We investigate the impact of various spin-orbit…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…
The spin-orbit coupling influences the total spin of semiconductor quantum dots. We analyze the theoretical prediction for the combined effects of spin-orbit coupling, weak vertical magnetic fields and deformation of the dot. Our results…
We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and…
We propose purely electric manipulation of spin qubits by means of the spin-orbit interaction (SOI) {\it without magnetic field or magnets} in a double-quantum dot. All the unitary transformations can be constructed by the time-dependent…
We revisit the problem of electron transport through mesoscopic rings with spin-orbit (SO) interaction. In the well-known path-integral approach, the scattering states for a quasi-1D ring with quasi-1D leads can be expressed in terms of…
We study spin-dependent diffusive transport in the presence of a tunable spin-orbit (SO) interaction in a two-dimensional electron system. The spin precession of an electron in the SO coupling field is expressed in terms of a covariant…
We study the coherent control of spin tunneling for a spin-orbit (SO) coupled boson held in a driven triple well. Under high-frequency approximation, we analytically obtain the quasienergies of the SO-coupled bosonic triple-well system and…
The spin of a single electron confined in a semiconductor quantum dot is a natural qubit candidate. Fundamental building blocks of spin-based quantum computing have been demonstrated in double quantum dots with significant spin-orbit…
We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity…
The ability for optically active media to rotate the polarization of light is the basis of polarimetry, an illustrious technique responsible for many breakthroughs in fields as varied as astronomy, medicine and material science. Here, we…
Recently, we have introduced a novel inter-subband-induced spin-orbit (s-o) coupling [Phys. Rev. Lett. 99, 076603 (2007); cond-mat/0607218] arising in \textit{symmetric} wells with at least two subbands. This new s-o coupling gives rise to…