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The efficiency of Large Language Model~(LLM) inference is often constrained by substantial memory bandwidth and capacity demands. Existing techniques, such as pruning, quantization, and mixture of experts/depth, reduce memory capacity…
To take fully advantage of Junctionless transistor (JLT) low-cost and low-temperature features we investigate a 475 degC process to create onto a wafer a thin poly-Si layer on insulator. We fabricated a 13nm doped (Phosphorous, 1E19 at/cm3)…
We propose a novel recurrent network-based HDR deghosting method for fusing arbitrary length dynamic sequences. The proposed method uses convolutional and recurrent architectures to generate visually pleasing, ghosting-free HDR images. We…
This work represents integration of MTJ with 30nm FinFET for low voltage analog write operations and readout optimization for the p-bit or true random number generator (TRNG), where the induced p-bit, the probabilistic state of the magnetic…
Emerging nano-scale programmable Resistive-RAM (RRAM) has been identified as a promising technology for implementing brain-inspired computing hardware. Several neural network architectures, that essentially involve computation of scalar…
A prototype of magnetoresistive random access memory (MRAM) based on magnetic tunnel junctions (MTJ) was fabricated with crossed-anisotropy of magnetic layers on either side of the tunnelling barrier layer. It is demonstrated that the…
Coherent optical memories will likely play an important role in future quantum communication networks. Among the different platforms, memories based on ladder-type orbital transitions in atomic gasses offer high bandwidth ($>100$ MHz),…
As capacity and complexity of on-chip cache memory hierarchy increases, the service cost to the critical loads from Last Level Cache (LLC), which are frequently repeated, has become a major concern. The processor may stall for a…
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic…
The residual stream acts as a memory bus where transformer layers both store and access features (Elhage et al., 2021). We consider changing the mechanism for retrieving and storing information in the residual stream, and replace the…
Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform…
Bipolar resistive switching (BRS) phenomenon has been demonstrated in Mn3O4 using Al (Aluminum)/Mn3O4/FTO (Fluorine doped Tin Oxide) Resistive Random Access Memory (RRAM) device. The fabricated RRAM device shows good retention, non volatile…
Analog content-addressable memories (aCAMs) based on memristors provide a promising pathway toward energy-efficient large-scale associative computing for Edge AI and embedded intelligence applications. They have been successfully applied to…
In this paper, a novel architecture for a deep recurrent neural network, residual LSTM is introduced. A plain LSTM has an internal memory cell that can learn long term dependencies of sequential data. It also provides a temporal shortcut…
The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (Rc). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition…
This paper presents a novel architecture utilizing a 10T SRAM cell for XNOR-based in-memory computing, aimed at mitigating the extensive routing challenges typically encountered in conventional in-memory computing systems. By integrating a…
The maximum achievable rate is derived for resistive random-access memory (ReRAM) channel with sneak path interference. Based on the mutual information spectrum analysis, the maximum achievable rate of ReRAM channel with independent and…
Recurrent transducer models have emerged as a promising solution for speech recognition on the current and next generation smart devices. The transducer models provide competitive accuracy within a reasonable memory footprint alleviating…
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…
Given the success of the gated recurrent unit, a natural question is whether all the gates of the long short-term memory (LSTM) network are necessary. Previous research has shown that the forget gate is one of the most important gates in…