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In this paper, we present a resistive switching memristor cell for implementing universal logic gates. The cell has a weighted control input whose resistance is set based on a control signal that generalizes the operational regime from NAND…
True random number generator (TRNG) plays a vital role in a variety of security applications and protocols. The security and privacy of an asset rely on the encryption, which solely depends on the quality of random numbers. Memory chips are…
Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…
Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT…
In contrast to Shannon transmission codes, the size of identification (ID) codes for discrete memoryless channels (DMCs) experiences doubly exponential growth with the block length when randomized encoding is used. Additional enhancements…
Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…
Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expected to be an ultimate non-volatile memory with ultra-low power…
Analog Content Addressable Memories (aCAMs) have proven useful for associative in-memory computing applications like Decision Trees, Finite State Machines, and Hyper-dimensional Computing. While non-volatile implementations using FeFETs and…
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
The Transformer architecture, underpinned by the self-attention mechanism, has become the de facto standard for sequence modeling tasks. However, its core computational primitive scales quadratically with sequence length (O(N^2)), creating…
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…
Herein, a bit-wise Convolutional Neural Network (CNN) in-memory accelerator is implemented using Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) computational sub-arrays. It utilizes a novel AND-Accumulation method capable of…
We investigated the low temperature performance of CoFeB/MgO based perpendicular magnetic tunnel junctions (pMTJs) by characterizing their quasi-static switching voltage, high speed pulse write error rate and endurance down to 9 K. pMTJ…
Superconducting electronics represents a promising technology, offering not only efficient integration with quantum computing systems, but also the potential for significant power reduction in high-performance computing. Nonetheless, the…
The increasing computational demand of Convolutional Neural Networks (CNNs) necessitates energy-efficient acceleration strategies. Compute-in-Memory (CIM) architectures based on Resistive Random Access Memory (RRAM) offer a promising…
Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however…
As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…
The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and…
Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…