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Gallium oxide (Ga2O3), with its ultra-wide bandgap (approximately 4.8 eV) and high breakdown field (approximately 8 MV per cm), is a leading candidate for photoconductive semiconductor switches (PCSSs) in high-power and high-speed pulsed…
We report an experimental study by electron paramagnetic resonance (EPR) of gamma ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (E'gamma, E'delta and triplet) and one…
Oxidation of two-dimensional (2D) layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low-power electronic devices. Gallium (II) sulfide ($\beta$-GaS), a hexagonal…
Electron tomography (ET) offers nanoscale 3D characterization of mesoporous materials but is often limited by their low scattering contrast. Here, we introduce a gallium (Ga) intrusion strategy for mesoporous silica that dramatically…
The temperature dependences of g factors of underdoped YBa2Cu3O7-x (Tc approximates 86.5K) indicate that the pseudogap onset temperature T*( approximates 190 K) coincides with the phase boundary established by resistivity, Nernst effect,…
Recent research in ultrawide-bandgap (UWBG) semiconductors has focused on traditional materials such as Ga2O3, AlGaN, AlN, cubic BN, and diamond; however some materials exhibiting single perovskite structure have been known to yield…
In the present Ph.D. Thesis we report an experimental investigation on the effects of gamma- and beta-ray irradiation and of subsequent thermal treatment on many types of a-SiO2 materials, differing in the production methods, OH- and…
Electron paramagnetic resonance (EPR) study of air-physisorbed defective carbon nano-onions evidences in favor of microwave assisted formation of weakly-bound paramagnetic complexes comprising negatively-charged O2- ions and edge carbon…
We present an electron paramagnetic resonance (EPR) study of ErSc2N@C80 fullerene in which there are two Er3+ sites corresponding to two different configurations of the ErSc2N cluster inside the C80 cage. For each configuration, the EPR…
Electron paramagnetic resonance (EPR) spectroscopy interrogates unpaired electron spins in solids and liquids to reveal local structure and dynamics; for example, EPR has elucidated parts of the structure of protein complexes that have…
The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to…
F+ center, an electron trapped at oxygen vacancy (VO), was investigated in the oxygen deficient Y3Al5O12 (YAG) crystals by EPR. The measurements were performed at temperatures 5-450 K and frequencies 9.4-350 GHz with using both the continue…
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate…
The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding…
We probe ultra-strong light matter coupling between metallic terahertz metasurfaces and Landau-level transitions in high mobility 2D electron and hole gases. We utilize heavy-hole cyclotron resonances in strained Ge and electron cyclotron…
We present a comprehensive spectroscopic study of C$_{2v}$ point-group symmetry sites in Sm$^{3+}$:CaF$_2$/SrF$_2$ codoped with either NaF or LiF. Data includes electron paramagnetic resonance measurements of Zeeman and hyperfine…
Gallium oxide (Ga$_2$O$_3$) is a wide-bandgap semiconductor with exceptional electrical and optical properties, making it a promising material for optoelectronic and sensing applications. In this work, we demonstrate for the first time the…
Gallium oxide with a corundum structure ({\alpha}-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta…
The compounds exhibit piezoelectricity, which demands to break inversion symmetry, and then to be a semiconductor. For $\mathrm{Ga_2O_3}$, the orthorhombic case ($\epsilon$-$\mathrm{Ga_2O_3}$) of common five phases breaks inversion…
We describe instrumentation for a high-frequency electron paramagnetic resonance (EPR) and pulsed electron-electron double resonance (PELDOR) spectroscopy. The instrumentation is operated in the frequency range of 107$-$120 GHz and…