Related papers: Electron paramagnetic resonance signatures of Co2+…

In this paper, an overview of the wide bandgap (WBG) semiconductors for radiation detection applications is presented. The recent advancements in the fabrication of high-quality wafers have enabled the remarkable WBG semiconductor device…

The electric dipole-forbidden, quadrupole 6S1/2 <-> 5D3/2 transition in Ba+ near 2051 nm, with a natural linewidth of 13 mHz, is attractive for potential observation of parity non-conservation, and also as a clock transition for a barium…

h-BN and Ga2O3 are two promising semiconductor materials. However, the band alignment of the Ga2O3/h-BN heterojunction has not been identified, hindering device development. In this study, the heterojunction was prepared by metalorganic…

Films of metal-insulator nanogranular composites M$_x$D$_{100-x}$ with different composition and percentage of metal and dielectric phases (M = Fe, Co, CoFeB; D = Al$_2$O$_3$, SiO$_2$, LiNbO$_3$; x $\approx$ 15-70 at.%) are investigated by…

We present a detailed study on the charge ordering (CO) transition in GdBaCo2O5 system by combining high resolution synchrotron powder/single crystal diffraction with electron paramagnetic resonance (EPR) experiments as a function of…

Highly asymmetric optical properties of b-Ga2O3 are investigated by polarization-dependent photoluminescence (PL) excitation spectroscopy for assessing its potential use for a novel ultraviolet emitter and nonlinear optical material. Based…

The electron paramagnetic resonance (EPR) parameters ($g$ factors $g_{i}$ and the hyperfine structure constants ${{A}}_{{i}}$, ${i} = {x}, {y}, {z}$) are interpreted by using the perturbation formulae for a $3{d}^{9}$ ion in rhombically…

We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of the field and frequency dependencies of the magnetic response due to the spin transitions associated with the…

The three-dimensional (3D) electronic structure of the hidden order compound URu$_2$Si$_2$ in a paramagnetic phase was revealed using a 3D angle-resolved photoelectron spectroscopy where the electronic structure of the entire Brillouin zone…

This paper reports the first demonstration of beta-phase gallium oxide as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). The propagation losses from visible to ultraviolet spectra were…

The 3D ternary Li$_2$GeO$_3$ compound, which could serve as the electrolyte material in Li+-based batteries, exhibits an unusual lattice symmetry (orthorhombic crystal), band structure, charge density distribution and density of states. The…

We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a visible blind deep UV detector, with GaN based…

We present general expressions for the magnetic transition rates in beam Electron Paramagnetic Resonance (EPR) experiments of anisotropic spin systems in the solid state. The expressions apply to general spin centers and arbitrary…

The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its…

Resonant magnetoabsorption spectra for CuGeO3 single crystals containing 2% of Co impurity are studied in the frequency range 60-360 GHz in magnetic field up to 16 T at temperatures 2-60 K. It is found that together with the resonance on…

Ga2O3 is a wide-band-gap semiconductor of great interest for applications in electronics and optoelectronics. Two-dimensional (2D) Ga2O3 synthesized from top-down or bottom-up processes can reveal brand new heterogeneous structures and…

Electron paramagnetic resonance spectroscopy in combination with site-directed spin-labeling is a very powerful tool for elucidating the structure and organization of biomolecules. Gd$^{3+}$ complexes have recently emerged as a new class of…

We report on the high-temperature evolution of far- and mid- infrared reflectivity and emissivity spectra of ambient orthorhombic ErMnO3 from 12 K to sample decomposition above 1800 K. At low temperatures the number of phonons agrees with…

In the low doping range of $x$ from 0.01 to 0.06 in La$_{2-x}$Sr$_{x}$CuO$_{4}$, a narrow electron paramagnetic resonance (EPR) line has been investigated. This line is distinct from the known broad line, both due to probing Mn$^{2+}$ ions.…

In ultrawide bandgap (UWBG) nitride and oxide semiconductors, increased bandgap (Eg) correlates with greater ionicity and strong electron-phonon coupling. This limits mobility through polar optical phonon scattering, localizes carriers via…