Related papers: Pb-doped p-type Bi$_2$Se$_3$ thin films via interf…
We use first-principles simulations to investigate the topological properties of Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$, which is a promising substrate for topological insulator (TI) based device…
Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high performance quantum devices. To achieve the better performance of TI, here we…
Doping Bi$_2$Se$_3$ by magnetic ions represents an interesting problem since it may break the time reversal symmetry needed to maintain the topological insulator character. Mn dopants in Bi$_2$Se$_3$ represent one of the most studied…
The structural, electronic, and optical properties of metal (Si, Ge, Sn, and Pb) mono- and co-doped anatase TiO$_{2}$ nanotubes are investigated, in order to elucidate their potential for photocatalytic applications. It is found that Si…
The superconductivity recently found in the doped topological insulator Cu_xBi_2Se_3 offers a great opportunity to search for a topological superconductor. We have successfully prepared a single-crystal sample with a large shielding…
Three dimensional (3D) topological insulators are quantum materials with a spin-orbit induced bulk insulating gap that exhibit quantum-Hall-like phenomena in the absence of applied magnetic fields. The proposed applications of topological…
When certain elemental metals like Cu, Sr and Nb are intercalated between the layers of Bi$_2$Se$_3$, a topological insulator, the intercalated systems superconduct with critical temperatures around 3 K. Naturally, in all these cases, the…
Thin film junctions and bilayers of the doped topological insulator $\rm Bi_2Se_3$ and the s-wave superconductor NbN were found to exhibit conductance spectra with prominent zero bias and coherence peaks. Various tunneling models with…
We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by doping with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and…
Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at…
The Bi$_2$Se$_3$ class of topological insulators has recently been shown to undergo a superconducting transition upon hole or electron doping (Cu$_x$-Bi$_2$Se$_3$ with T$_C$=3.8$^o$K and Pd$_x$-Bi$_2$Te$_3$ with T$_C$=5$^o$K), raising the…
Topological insulators are a class of band insulators with non-trivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the…
Band gap engineering in SrTiO${}_{3}$ and related titanate perovskites has long been explored due to the intriguing properties of the materials for photocatalysis and photovoltaic applications. A popular approach in the materials chemistry…
A two-step doping process, magnetic followed by charge or vice versa, is required to produce insulating massive surface states in topological insulators for many physics and device applications. Using first-principles calculations, we…
We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature.…
Recent theoretical studies employing density-functional theory have predicted BaBiO$_{3}$ (when doped with electrons) and YBiO$_{3}$ to become a topological insulator (TI) with a large topological gap (~ 0.7 eV). This, together with the…
Transient reflectivity (TR) from thin films (6 - 40 nm thick) of the topological insulator Bi2Se3 reveal ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in…
A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface…
Topological insulators represent a novel state of matter with surface charge carriers having a massless Dirac dispersion and locked helical spin polarization. Many exciting experiments have been proposed by theory, yet, their execution have…
Bi$_2$Se$_3$ is a topological insulator and it is often doped with Te to compensate the $n$-type carriers due to Se vacancies. Different doping patterns of Te would influence the transport characteristics of the surface states. We study the…