A two-step doping process, magnetic followed by charge or vice versa, is required to produce insulating massive surface states in topological insulators for many physics and device applications. Using first-principles calculations, we demonstrate here simultaneous magnetic and hole doping achieved with a single dopant, carbon, in Bi2Se3. Carbon substitution for Se (CSe) results in an opening of a sizable surface Dirac gap (53-85 meV), while the Fermi level (EF) remains inside the bulk gap and close to the Dirac point at moderate doping concentrations. The strong localization of 2p states of CSe favors spontaneous spin polarization via a p-p interaction and formation of ordered magnetic moments mediated by the surface state. Meanwhile, holes are introduced into the system by CSe. This dual function of carbon doping suggests a simple way to realize insulating massive topological surface states.
@article{arxiv.1303.3467,
title = {Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon},
author = {Lei Shen and Minggang Zeng and Yunhao Lu and Ming Yang and Yuan Ping Feng},
journal= {arXiv preprint arXiv:1303.3467},
year = {2013}
}