Related papers: Non-localized states and high hole mobility in amo…

We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP…

We systematically investigate the influence of high pressure on the electronic transport properties of layered ferromagnetic materials, in particular, those of Fe$_3$GeTe$_2$. Its crystal sustains a hexagonal phase under high pressures up…

Metals with values of the resistivity and the Hall coefficient much larger than typical ones, e.g., of sodium, are called semimetals. We suggest a model for semimetals which takes into account the strong Coulomb repulsion of the charge…

Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as…

We report anomalous Hall effect (AHE) in single crystals of quasi-two-dimensional Fe$_{3-x}$GeTe$_2$ ($x \approx 0.36$) ferromagnet grown by the flux method which induces defects on Fe site and bad metallic resistivity. Fe K-edge x-ray…

We investigated the in-plane transport properties of the Fe-based superconductor Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$ with a wide composition range $0 \leq x \leq 0.55$. We show that the doping dependence of the Hall coefficient is…

We report electrical conductivity $\sigma$ measurements on a range of two-dimensional electron gases (2DEGs) of varying linear extent. Intriguingly, at low temperatures ($T$) and low carrier density ($n_{\mathrm{s}}$) we find the behavior…

High-purity germanium (Ge) has re-emerged as a versatile semiconductor platform for spin-based quantum information processing because it combines mature materials processing, access to spin-free isotopes, high mobilities, small effective…

Using simultaneous measurements of the attenuation and velocity of surface acoustic waves propagating along GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructures, complex ac conductance of the latters has been determined. In the magnetic fields…

We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and…

Ge/SiGe quantum well heterostructures confining a high-mobility two-dimensional hole gas (2DHG) have emerged as a compelling platform for hybrid superconductor(S)-semiconductor(Sm) quantum devices. Here, we investigate the low-temperature…

Group-IV monochalcogenides are emerging as a new class of layered materials beyond graphene, transition metal dichalcogenides (TMDCs), and black phosphorus (BP). In this paper, we report experimental and theoretical investigations of the…

We study the effect of disorder on the anomalous Hall effect (AHE) in two-dimensional ferromagnets. The topological nature of AHE leads to the integer quantum Hall effect from a metal, i.e., the quantization of $\sigma_{xy}$ induced by the…

Ge$_{1-x}$Fe$_{x}$ (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with Si technology. We have studied its electronic structure by…

We present magnetization, specific heat, resistivity, and Hall effect measurements on the cubic B20 phase of MnGe and CoGe and compare to measurements of isostructural FeGe and electronic structure calculations. In MnGe, we observe a…

Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic…

In the upcoming process to overcome the limitations of the standard von Neumann architecture, synaptic electronics is gaining a primary role for the development of in-memory computing. In this field, Ge-based compounds have been proposed as…

The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well…

Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional…

The many-body wave-function of an interacting one-dimensional electron system is probed, focusing on the low-density, strong interaction regime. The properties of the wave-function are determined using tunneling between two long, clean,…