Related papers: Non-localized states and high hole mobility in amo…

Two-dimensional electron systems (2DESs) confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid…

High-pressure studies on elements play an essential role in superconductivity research, with implications for both fundamental science and applications. Here we report the experimental discovery of surprisingly low pressure driving a novel…

The frequency dependence of conductivity in In$_4$Se$_3$, pure and with copper admixture crystals, in the region of nitrogen temperatures is investigated. It was found out that variable length hops on the localized levels in the vicinity of…

Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes…

We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…

We experimentally investigate non-linear Hall effect as zero-frequency and second-harmonic transverse voltage responses to ac electric current for topological semimetal GeTe. A thick single-crystal GeTe flake is placed on the Si/SiO$_2$…

The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin…

Quantum electronic devices at the single impurity level demand an understanding of the physical attributes of dopants at an unprecedented accuracy. Germanium-based technologies have been developed recently, creating a necessity to adapt the…

The anomalous Hall effect (AHE) is a well-known fundamental property of ferromagnetic metals, commonly associated with the presence of a net magnetization. Recently, an AHE has been discovered in non-collinear antiferromagnetic (AFM)…

Phase change materials can be reversibly switched between amorphous and crystalline states and often show strong contrast in the optical and electrical properties of these two phases. They are now in widespread use for optical data storage,…

Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constrained by low hole mobility. In this work, we take 2D-GaAs as a…

We study an insulator-metal transition in a ternary chalcogenide glass (GeSe$_3$)$_{1-x}$Ag$_x$ for $x$=0.15 and 0.25. The conducting phase of the glass is obtained by using "Gap Sculpting" (Prasai et al, Sci. Rep. 5:15522 (2015)) and it is…

We report new accurate mesasurements of the mobility of excess electrons in high density Helium gas in extended ranges of temperature $[(26\leq T\leq 77) K ]$ and density $[ (0.05\leq N\leq 12.0) {atoms} \cdot {nm}^{-3}]$ to ascertain the…

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) is stud- ied in amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates were measured with a time-resolved reflectivity (TRR)…

We report a systematic study of structural and transport properties in single crystals of Ba(Fe_(1-x)Ru_x)_2As_2 for x ranging from 0 to 0.5. The isovalent substitution of Fe by Ru leads to an increase of the a parameter and a decrease of…

We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood…

Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has…

Mechanochemically synthesized amorphous 50SISOMO [50AgI-25Ag_2O-25MoO_3] fast ionic conductor shows high ionic conductivity of ~ 6x10^-3 {\Omega}^-1 cm-1 at room temperature. The highest ionic conductivity is achieved for 36 h milled…

We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface…

We have carried out an investigation of the structural, magnetic, transport and superconducting properties of Fe$_{1+z}$Te$_{1-x-y}$Se$_x$S$_y$ ceramic compounds, for $z=0$ and some specific Se (0$\leq$ x $\leq$ 0.5) and S (0 $\leq$ y…