Related papers: Non-localized states and high hole mobility in amo…
Transport measurements made on films of thallium-oxide (n-type semiconductor) are presented and discussed. The focus in this work is on the strongly-localized regime where charge transport is by variable-range-hopping. It is demonstrated…
The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge…
We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ($\sim4\times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN…
We have measured both magnetoresistance and Hall effect in CeOs$_4$Sb$_{12}$ to clarify the large resistivity state ascribed to the Kondo insulating one and the origin of the phase transition near 0.9 K reported in the specific heat…
The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW…
The magnetotransport behaviour inside the nematic phase of bulk FeSe reveals unusual multiband effects that cannot be reconciled with a simple two-band approximation proposed by surface-sensitive spectroscopic probes. In order to understand…
The modulation of topological electronic states by an external magnetic field is highly desired for condensed matter physics. Schemes to achieve this have been proposed theoretically, but few can be realized experimentally. Here, combining…
In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…
The field and temperature dependencies of the longitudinal and Hall resistivity have been measured for FeSe${}_{1-x}$S${}_{x}$ (x=0.04, 0.09 and 0.19) single crystals. The sample FeSe${}_{0.81}$S${}_{0.19}$ does not show a transition to an…
Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be…
We report on the magnetic and Hall effect measurements of the magnetic Weyl semimetal, Mn$_{2.94}$Ge (Ge-rich) single crystal. From the magnetic properties study, we identify unusual multiple magnetic transitions below the N$\acute{e}$el…
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as…
Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium…
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…
We report the topological electronic structure, magnetic, and magnetotransport properties of a noncentrosymmetric compound GdAlSi. Magnetic susceptibility shows an antiferromagnetic transition at $T_\mathrm{N}$ = 32 K. In-plane isothermal…
Oxygen-deficient amorphous tellurium oxides ($a$-TeO$_x$) have recently challenged the intrinsic hole mobility limits of amorphous oxides, with thin-film transistors reaching mobilities up to 15 cm$^{2}$V$^{-1}$s$^{-1}$ upon Se doping.…
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading…
We investigate the transport characteristics of Ge/Si-Core/Shell nanowire with Coulomb Blockade in presence of external magneto-electric fields from a theoretical basis. Using the effective Luttinger-Kohn Hamiltonian we calculate the…
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At…
The advent of new-class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as hopping between localized states versus extended state conduction. Here, we…