Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

M. Yu. Melnikov; A. A. Shashkin; V. T. Dolgopolov; S. -H. Huang; C. W. Liu; S. V. Kravchenko

doi:10.1063/1.4914007

Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

Mesoscale and Nanoscale Physics 2015-03-06 v2 Strongly Correlated Electrons

Authors: M. Yu. Melnikov , A. A. Shashkin , V. T. Dolgopolov , S. -H. Huang , C. W. Liu , S. V. Kravchenko

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Abstract

We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.

Keywords

two-dimensional electron gas ultra-high mobility SiGe/Si/SiGe quantum well SiO insulator threshold voltage small-angle scattering short-range random potential

Cite

@article{arxiv.1410.6019,
  title  = {Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well},
  author = {M. Yu. Melnikov and A. A. Shashkin and V. T. Dolgopolov and S. -H. Huang and C. W. Liu and S. V. Kravchenko},
  journal= {arXiv preprint arXiv:1410.6019},
  year   = {2015}
}

Comments

as published. arXiv admin note: substantial text overlap with arXiv:1409.2712

Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

Abstract

Keywords

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