The frequency dependence of conductivity in In4Se3, pure and with copper admixture crystals, in the region of nitrogen temperatures is investigated. It was found out that variable length hops on the localized levels in the vicinity of Fermi level is pre-dominant mechanism of charge transfer in the crystals. For pure In4Se3 crystals the density of localized states is 1017−1018 eV−1⋅cm−3, the mean hop length is 220--350 {\AA}. The reasons for the occurrence of localized states are considered within the model of a layered crystal as a quasi-disordered system.
@article{arxiv.2001.06619,
title = {Frequency dependence of conductivity in the layered In$_4$Se$_3$ crystals},
author = {J. M. Stakhira and T. M. Demkiv and O. Ye. Fl'unt},
journal= {arXiv preprint arXiv:2001.06619},
year = {2020}
}